UCC27210DR

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Texas Instruments UCC27210DR drives insulated-gate bipolar transistors (IGBTs) and gate-turnoff thyristors (GTOs) in applications requiring up to 600 Volt breakdown voltage ratings. It comes in an eight-pin SOIC package, and is designed to switch or turn off the gate of the IGBTs or GTOs that control the output power transistors of a power inverter. The UCC27210DR is typically used in applications such as electronic ballasts, solar inverters and uninterruptible power supplies (UPS). It has many practical features, including: current limiting, technical overload protection, thermal overload protection, fast turnon and very fast turnoff, high frequency operation, deadtime control and a high withstand voltage.

UCC27210DR Application Field and Working Principle

The UCC27210DR family is part of Texas Instruments\' Gate Driver portfolio. It is designed for high voltage IGBTs, SCRs and triacs, making it an ideal solution for high power applications such as motor control, solar inverter, uninterruptible power supplies and renewable energy systems. In these applications, the UCC27210DR offers enhanced performance and improved system efficiency through its programmable current limiting, built-in fault protection, dead-time control, fast switching capability and accurate shutdown feature.

The UCC27210DR is based on a linear integrated circuit that uses a common-emitter (CE) amplifier configured as a emitter-follower. This amplifier has a controlled input resistance, so it can drive both IGBTs and triacs with a high output voltage and current. It has very good linearity and is capable of providing accurate slew rate control and a wide range of gate-turnoff properties. It can be used with a variety of devices, including IGBTs, MOSFETs, thyristors, etc.

The UCC27210DR features two devices: one driver for the upper gate and one for the lower gate. The driver has a minimum peak output current of 600mA and a maximum peak output current of 1.2 amperes. It is designed with a current limitation feature that limits the peak output current to prevent damage to the gate of the IGBT or GTO due to excessive current. The UCC27210DR also has a low impedance output which allows it to drive large capacitive loads efficiently.

The UCC27210DR has built-in dead-time control, which allows the user to set the delay time at the gate turn-off and turn-on points. This feature is important in applications that require a precise synchronization between the upper and lower gates of the IGBTs and GTOs, as is the case in solar inverters and uninterruptible power supplies. The UCC27210DR can also be used as a low-side gate driver, enabling the use of dual-gate IGBTs for more efficient operation.

The UCC27210DR is also equipped with thermal and technical over-voltage protection. The thermal protection feature prevents overheating of the gate drivers if the output current is too high while the technical protection feature safeguards the gate drivers if the voltage across the output is too large.

The UCC27210DR has a maximum breakdown voltage of 600V, making it suitable for use in applications with higher voltage systems. It is also suitable for use in applications that require high switching frequencies due to its low output impedance and low rise/fall times. The typical rise/fall time for this family is less than 5ns, making it suitable for both switching and PWM applications.

The UCC27210DR family is a complete family of single-channel gate drivers for driving high voltage IGBTs, SCRs and triacs. It is an ideal solution for high power applications that require a high voltage breakdown and fast switching. The UCC27210DR family is designed to provide high efficiency, low power dissipation and fast switching speeds. The integrated current limiting and built-in fault protection features ensure long life and reliability of the gate drive system.

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