UCC27211DDA

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1. Describe

The UCC27210 and UCC27211DDA drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but offer some significant performance improvements. Peak output pull-up and pull-down currents have been increased to 4-A sourcing and 4-A sinking, and pull-up and pull-down resistances have been reduced to 0.9 Ω, allowing high-power MOSFETs to be driven with minimal switching Miller plateau transitions through MOSFETs losses during the period. The input structure is now able to handle –10 VDC directly, which improves robustness and also allows direct connection to the gate drive transformer without the use of rectifier diodes. The input is also independent of the supply voltage, with a maximum rating of 20V. The switch node (HS pin) of the UCC27211DDA can handle –18 V maximum, which protects the high-side channel from inherently negative voltages caused by parasitic inductance and stray capacitance. The UCC27210 (pseudo-CMOS input) and UCC27211DDA (TTL input) add hysteresis, allowing connection to analog or digital PWM controllers with enhanced noise immunity. The low-side and high-side gate drivers are independently controlled and matched to each other for 2 ns on and off. An on-chip 120V rated bootstrap diode eliminates external discrete diodes. Provides undervoltage lockout for high-side and low-side drivers, provides symmetrical turn-on and turn-off behavior, and forces the output low when the drive voltage is below a specified threshold. Both devices are available in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8 (DRM) and SON10 (DPR) packages.

2. Feature

    1. Drives two N-channel MOSFETs in high-side and low-side configurations with independent inputs

    2. Maximum starting voltage 120V DC

    3. 4A sink, 4A source output current

    4. 0.9-Ω pull-up and pull-down resistors

    5. Input pins tolerate –10 V to 20 V independent of supply voltage range

    6. TTL or pseudo-CMOS compatible input version

    7. 8V to 17V VDD operating range, (20V absolute maximum)

    8. 7.2ns rise time and 5.5ns fall time, 1000pF load

    9. Fast propagation delay time (18 ns typical)

  10. 2ns delay match

  11. Symmetrical undervoltage lockout for high-side and low-side drivers

  12. Available in all industry standard packages

  13. Specified as –40 to 140 °C

3. Application

    1. Power for telecommunications, datacom and merchants

    2. Half-bridge and full-bridge converters

    3. Push-Pull Converter

    4. High Voltage Synchronous Buck Converters

    5. Dual Switch Forward Converter

    6. Active Clamp Forward Converter

    7. Class D audio amplifier

4. Pin configuration

5. Pin Description

6. Application Information

To achieve fast switching of power devices and reduce the associated switching power losses, a powerful gate driver is used between the PWM output of the controller and the gate of the power semiconductor device. In addition, gate drivers are also necessary when the PWM controller cannot directly drive the gates of switching devices. With the advent of digital power supplies, this situation is often encountered, because the PWM signal from the digital controller is usually a 3.3V logic signal and cannot effectively turn the power switch on. A level shifting circuit is required to boost the 3.3V signal to a gate drive voltage (eg 12V) to fully turn on the power device and minimize conduction losses. Traditional buffer driver circuits based on totem-pole-arranged NPN/PNP bipolar transistors are emitter-follower configurations, which have proven unsuitable for digital power supplies due to their lack of level shifting capability. The gate driver effectively combines level shifting and buffer drive functions. Gate drivers have also found other needs, such as minimizing high frequency switching noise by placing high current drivers physically close to power switches, driving gate drive transformers and controlling floating power device gates, reducing power dissipation and thermal stress The effect is in the controller by shifting the gate charge power loss from the controller to the driver. Finally, emerging wide-bandgap power device technologies, such as GaN-based switches, capable of supporting very high switching frequency operation, place very specific requirements on gate drive capability. These requirements include operation at low VDD voltages (5 V or less), low propagation delay, and availability in compact, low inductance packages with good thermal capability. In conclusion, gate driver devices are extremely important components in switching power supplies, combining high performance, low cost component count with reduced board space and simplified system design.