| Allicdata Part #: | UCC27527DSDR-ND |
| Manufacturer Part#: |
UCC27527DSDR |
| Price: | $ 0.62 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Texas Instruments |
| Short Description: | IC GATE DVR LO-SIDE DL 5A 8SON |
| More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 8... |
| DataSheet: | UCC27527DSDR Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.56133 |
| Logic Voltage - VIL, VIH: | -- |
| Base Part Number: | UCC27527 |
| Supplier Device Package: | 8-SON (3x3) |
| Package / Case: | 8-WDFN Exposed Pad |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 140°C (TJ) |
| Rise / Fall Time (Typ): | 7ns, 6ns |
| Input Type: | Inverting, Non-Inverting |
| Current - Peak Output (Source, Sink): | 5A, 5A |
| Series: | -- |
| Voltage - Supply: | 4.5 V ~ 18 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The UCC27527DSDR is a P-channel Mosfet/IGBT Gate Driver integrated circuit developed by Texas Instruments. It is part of the UCC27517 family of products and is an enhanced version of the UCC27517. It is specially designed to drive n-channel and p-channel MOSFETs and IGBTs in high-current applications such as switchmode power supplies and motor controllers.
The UCC27527DSDR has an integrated P-channel MOSFET/IGBT gate drive circuit with high-speed switching frequency and improved EMI performance. It also features an integrated load switch to protect the gate drive circuit from overvoltage conditions. The device can handle both positive and negative gate drive voltage, so it can be used for gate drive voltages above and below the gate drive potential.
The UCC27527DSDR is designed to drive the gates of both N-channel MOSFETs/IGBTs and P-channel MOSFETs/IGBTs. Its gate drive characteristics are optimized for both types of devices when operating in switchmode applications. It provides fast switching times and low gate charge, which results in high efficiency, long life and improved noise immunity. In addition, the device features an adjustable gate threshold voltage, allowing the user to customize the gate drive characteristics to suit the application.
The UCC27527DSDR includes a slew rate control (SRC) input that can be used to reduce input load currents during operation. This reduces power dissipation, allowing for smaller power supplies and improved device performance. The SRC also prevents false triggering of the MOSFET/IGBT gates due to high transient voltages such as ESD events.
The UCC27527DSDR also features an integrated temperature protection circuit that reduces power dissipation if the device temperature exceeds a certain threshold. This ensures the reliability of the device and prolongs its life. In addition, the device has an integrated overvoltage protection circuit that shuts off the gate drive voltage if an overvoltage condition is detected, protecting the MOSFET/IGBT gates from damage.
The UCC27527DSDR is ideal for high power applications such as switchmode power supplies, motor controllers and MOSFET/IGBT gate driving, as it provides fast switching, low gate charge, high efficiency, integrated temperature and overvoltage protection, and adjustable gate threshold voltage. This combination of features makes the UCC27527DSDR an excellent choice for driving MOSFETs and IGBTs in high power applications.
The specific data is subject to PDF, and the above content is for reference
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UCC27527DSDR Datasheet/PDF