Allicdata Part #: | UF1001DITR-ND |
Manufacturer Part#: |
UF1001-T |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 1A DO41 |
More Detail: | Diode Standard 50V 1A Through Hole DO-41 |
DataSheet: | UF1001-T Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.05114 |
10000 +: | $ 0.04546 |
25000 +: | $ 0.04262 |
50000 +: | $ 0.03779 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | UF1001 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UF1001-T is a type of rectifier diode, also known as a signal diode. It is a semiconductor device that converts alternating current (AC) to direct current (DC). This type of diode has an anode and a cathode, with the anode connected to the positive voltage and the cathode connected to the negative voltage. The UF1001-T is a high-speed, low-dynamic resistance, high-current, single-phase silicon rectifier diode. It is designed for use in switching power supplies, UPS, battery charging, and other various rectification applications. This type of diode has a high forward current rating and fast switching speed, making it ideal for a range of applications. The working principle of the UF1001-T is based on the rectifying effect of diodes. The current flows only in one direction through a diode, which is called the “forward bias.” The forward bias current is limited to the rated forward current and the diode is in the most conductive state when the forward bias voltage is above the cut-in voltage. In a reverse bias condition, the current through the diode is blocked and the diode is in a non-conductive state. The main benefits of the UF1001-T are its small size and fast switching speed. It is also capable of dissipating high power amounts, making it suitable for a variety of rectification applications. The UF1001-T also provides excellent protection against transient surges and its robust construction helps to enhance its reliable operation. The UF1001-T is commonly used in automotive applications, medical equipment, battery chargers, UPS, and home appliances. It is also used in general rectification applications, such as motor control, low-frequency switching supplies, and power factor correction. The UF1001-T is well suited for high-speed, high-current rectifier applications where space saving and reliability are key considerations. The UF1001-T offers a good combination of high surge capability and high current rating. It is available in a variety of leaded and surface-mount packages, making it suitable for a wide range of rectifier products and applications. The UF1001-T also boasts an innovative dual-package design that allows for improved high-power applications. The UF1001-T is a high-performance rectifier diode that is suitable for a wide range of applications. Its small size, fast switching speed, and high surge capability make it an ideal choice for many rectification applications. The UF1001-T can be used in automotive, medical, battery charging, and UPS applications, as well as in general rectification. Its dual-package design improves its reliability and makes it suitable for high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UF1001-T | Diodes Incor... | 0.06 $ | 10000 | DIODE GEN PURP 50V 1A DO4... |
UF1004-T | Diodes Incor... | -- | 5000 | DIODE GEN PURP 400V 1A DO... |
UF1007-T | Diodes Incor... | -- | 5000 | DIODE GEN PURP 1KV 1A DO4... |
UF1002-T | Diodes Incor... | -- | 10000 | DIODE GEN PURP 100V 1A DO... |
UF1005-T | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
UF1003-T | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
UF1006-T | Diodes Incor... | -- | 1000 | DIODE GEN PURP 800V 1A DO... |
UF10BCT-E3/4W | Vishay Semic... | 0.28 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
UF10CCT-E3/4W | Vishay Semic... | 0.28 $ | 1000 | DIODE ARRAY GP 150V 5A IT... |
UF10DCT-E3/4W | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 200V 5A IT... |
UF1005-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
UF1006-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
UF1005-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
UF1006-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
UF1005-M3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
UF1006-M3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
UF1005-M3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
UF1006-M3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
UF1007-M3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
UF1007-M3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
UF1007-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
UF1007-E3/54 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
UF1050A-IC-E | Qualcomm | 0.0 $ | 1000 | IC RF TXRX WIFI 88-WLCSPI... |
UF1050B-IC-E | Qualcomm | -- | 1000 | IC RF TXRX WIFI 88-WLCSPI... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...