UF1B R0G Allicdata Electronics
Allicdata Part #:

UF1BR0G-ND

Manufacturer Part#:

UF1B R0G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A DO204AL
More Detail: Diode Standard 100V 1A Through Hole DO-204AL (DO-4...
DataSheet: UF1B R0G datasheetUF1B R0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03832
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Silicon diodes, or rectifiers as they are more commonly known, are semiconductor devices used to control the flow of current within an electric circuit. They are the most common type of diode available on the market today, and are used in a wide variety of applications. One of these applications is the UF1B R0G rectifier, which is specifically designed for use in high voltage applications. This article will discuss the application field and working principle of the UF1B R0G rectifier.

The UF1B R0G rectifier has been designed with the purpose of providing a cost-effective solution for high voltage applications. It is capable of regulating the flow of current within a circuit to ensure the most efficient operation possible. Its operating voltage range is between 60V and 700V, making it suitable for use in a variety of applications. Additionally, the device is capable of operating in temperatures ranging from -67°C to +125°C, meaning it can be used in a variety of environments.

The UF1B R0G rectifier is a three-terminal, unidirectional, surface mounted device. It consists of two p-type silicon junctions which are connected to each other with a single p-type junction in between. The two p-type junctions are called the anode and the cathode, and the single junction connecting them is called the gate. This device has been designed to be used for high voltage applications and therefore has a high reverse voltage capability of up to 700V.

When the device is in operation, it will control the flow of current within the circuit by regulating the voltage that is applied to the gate. When a negative voltage is applied to the gate, the p-type junction between the anode and cathode becomes reverse biased, meaning no current can flow through the device. Conversely, when a positive voltage is applied to the gate, the forward bias allows current to flow through the device.

In order to increase the efficiency of the device, it can be used with a Schottky diode. This will reduce the forward voltage drop across the device while also providing a higher reverse voltage capability. This will allow the device to operate more efficiently and provide greater protection from overvoltage conditions. Additionally, the device is protected from overcurrent conditions thanks to its thermal design.

In summary, the UF1B R0G rectifier is an ideal choice for high voltage applications. It can operate in a wide range of temperatures and has a high reverse voltage capability. Additionally, the device is protected from overvoltage and overcurrent conditions, making it a reliable and safe option for your circuit. Furthermore, the device can be used in conjunction with a Schottky diode to increase its efficiency.

The specific data is subject to PDF, and the above content is for reference

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