Allicdata Part #: | UF1DA0G-ND |
Manufacturer Part#: |
UF1D A0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO204AL |
More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | UF1D A0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.04755 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes and rectifiers are components used in many applications. Single diodes, or single-function diodes as they are sometimes known, are the simplest and most basic semiconductor diode type. UF1D A0G diodes are one of the standard single diode semiconductor components used today. In this article, we will explore the application fields and working principles of UF1D A0G diodes.
UF1D A0G diodes are also generally referred to as “solar cells” because they are used to convert sunlight into electricity. They are used most often in off-grid and mobile applications due to their rugged construction and stability in wide range of environmental conditions. They are also often used in photovoltaic solar panels because of their ability to convert relatively high voltage and current levels with minimal power loss. In addition to their solar applications, UF1D A0G diodes are used in a variety of other applications such as alarm systems, computers, automotive, power converters and voltage regulators.
When it comes to understanding the working principle of UF1D A0G solar cells, it is important to look at how they are constructed. UF1D A0G diodes are composed of a p-type semiconductor material and an n-type semiconductor material connected in series. The p-type material is usually made of germanium or silicon doped with natural impurities such as boron or phosphorus. The n-type material is usually doped with impurities such as arsenic, aluminum or antimony. The two materials are connected in series and form a “P-N Junction” which allows current to flow between the two materials.
When a UF1D A0G diode is exposed to high-energy solar radiation, electrons are generated in the n-type material which then flow to the positive terminal of the junction and current is generated. This current flows in one direction, from the negative terminal to the positive terminal of the junction. The current then “rectifies” the voltage at the junction into a usable direct current. This is how UF1D A0G diodes work to convert sunlight into electricity.
The UF1D A0G diode is a widely applicable semiconductor component used in numerous applications from solar-power to automotive. They are ruggedly constructed and highly stable, operating effectively regardless of environmental conditions. The working principle of UF1D A0G diodes is relatively simple and relies on a p-n junction between two materials to convert high-energy solar radiation into useable electricity. In summary, UF1D A0G diodes are an ideal single diode semiconductor choice for users looking for an effective and reliable power source.
The specific data is subject to PDF, and the above content is for reference
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