Allicdata Part #: | UF1DR1G-ND |
Manufacturer Part#: |
UF1D R1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO204AL |
More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | UF1D R1G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04755 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 17pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A UF1D R1G rectifier is a single rectifier in the diodes family, capable of highly efficient power conversion. It is a monolithic, miniaturized rectifier with a built-in reverse current and temperature protection that offers low power losses and operational reliability over a wide input voltage range. UF1D R1G rectifiers are typically used in power supplies and energy conservation applications.
The UF1D R1G rectifier utilizes a variety of technologies to achieve the desired power conversion efficiency. At the heart of the device is a multi-anode Schottky rectifier, which is constructed of an alloyed thin film that creates a low voltage drop across it for maximum efficiency. An integrated wide VFET Gate Array provides efficient heat dissipation and effectively reduces reverse current leakage. In addition, a high-bandwidth high-side switch provides a low-impedance path to more efficiently deliver power in applications with a large voltage differential between the input and output.
A UF1D R1G rectifier\'s working principle is based on the PN junction diode model. In a PN junction diode, the junction between the P-type and N-type regions is known as the depletion region. When a forward bias voltage is applied across the PN junction, the electrons and holes start to move in opposite directions which creates a potential field. This potential field enables the flow of current in one direction, and the diode blocks the reverse flow of current.
The UF1D R1G rectifier then takes the principles of a PN junction diode and applies it to a series of multi-anode Schottky diodes. The Schottky diodes, made up of an alloyed thin film, provides a lower voltage drop across the junction, resulting in a higher efficiency power conversion than a traditional PN junction diode. The peak inverse voltage (PIV) rating of a UF1D R1G rectifier will depend on its current rating, number of phases, and number of diodes in the series.
The UF1D R1G rectifier is ideal for a wide range of power conversion applications, including power supplies, AC/DC converters, motor controls, and lighting systems. Its low power losses and integrated reverse current and temperature protection make it a reliable and efficient rectifier for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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