Allicdata Part #: | UG10BCT-E3/45-ND |
Manufacturer Part#: |
UG10BCT-E3/45 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 100V 5A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 100V 5A... |
DataSheet: | UG10BCT-E3/45 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.34668 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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UG10BCT-E3/45 Application Field and Working Principle
The UG10BCT-E3/45 is a type of high-power surface mount Schottky barrier rectifier array. It is a three-terminal device specifically designed as an array of four independent rectifying Schottky Barrier diodes housed in a single SMD package. Each device is rated to handle up to 10A current and has a maximum VF of less than 0.45V at the rated current, making it ideal for applications that require low voltage drop. The devices are available in both leaded and lead-free packages, allowing for use in a wide range of applications.
The UG10BCT-E3/45 is primarily used for DC-to-DC conversion and or as high-power rectifiers. As an array, it has an impedance that is significantly lower than that of a single Schottky diode and can typically handle higher currents than discrete diodes, making it an extremely efficient solution for applications such as motor control, switching power supplies, and computer power supplies.
The device operates by using the Schottky barrier effect, a phenomenon based on the rectifying properties of a junction between a metal and a semiconductor material. This junction, called the Schottky barrier, forms a rectifying structure when current passes through it, allowing current to flow in one direction only. The Schottky barrier effect reduces the forward voltage of the diode, making it ideal for use in applications where a low voltage drop is required.
Additionally, the UG10BCT-E3/45 has a higher reverse junction capacitance than a standard p-n junction, meaning that the device acts as a filter to reduce the effects of high-frequency noise in high-speed switching applications. This, combined with its low forward voltage drop, makes it ideal for switching power supplies, electromechanical motor controls, and power inverter circuits.
Due to its fast recovery time, low forward voltage, and low junction capacitance, the UG10BCT-E3/45 is an excellent choice for low voltage, high current consumption, and high-frequency noise applications. While it is primarily used for DC-to-DC conversion, its low forward voltage drop also makes it a suitable choice for LED lighting and motor control applications.
In summary, the UG10BCT-E3/45 is a type of high-power surface mount Schottky barrier rectifier array. It is rated to handle 10A maximum current and 0.45V maximum forward voltage, making it ideal for applications requiring low voltage drop. The Schottky barrier effect reduces the forward voltage of the diode, making it well-suited for use in switching power supplies, electromechanical motor controls, and power inverters. Additionally, its higher reverse junction capacitance reduces the effects of high-frequency noise and its fast recovery time makes it suitable for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UG10DCT-E3/45 | Vishay Semic... | -- | 678 | DIODE ARRAY GP 200V 5A TO... |
UG1008GHC0G | Taiwan Semic... | 0.8 $ | 982 | DIODE ARRAY GP 600V 10A T... |
UG1004G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 200V 10A T... |
UG1005G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 300V 10A T... |
UG1006G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 400V 10A T... |
UG1007G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 500V 10A T... |
UG1008G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 600V 10A T... |
UG1004GHC0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE ARRAY GP 200V 10A T... |
UG1005GHC0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE ARRAY GP 300V 10A T... |
UG1006GHC0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE ARRAY GP 400V 10A T... |
UG1007GHC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 500V 10A T... |
UG10DCT-5300HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP T0220ABDio... |
UG10DCT-5301HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP T0220ABDio... |
UG10DCT-5410HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP T0220ABDio... |
UG1001-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
UG1002-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
UG1003-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
UG1004-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
UG1005-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
UG10BCT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
UG10CCT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
UG10FCT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE ARRAY GP 300V 5A TO... |
UG10GCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 400V 5A TO... |
UG10BCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
UG10CCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
UG10DCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
UG10FCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 300V 5A TO... |
UG10GCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 400V 5A TO... |
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