Allicdata Part #: | UG10GCT-E3/45-ND |
Manufacturer Part#: |
UG10GCT-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 400V 5A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 400V 5A... |
DataSheet: | UG10GCT-E3/45 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The current state of the semiconductor industry and technology enables the development of new products which allow improved power management. The UG10GCT-E3/45 is an example of one such product. It is a rectifier configured as a single chip silicon array for applications in various Power Management and System Level Control applications. The UG10GCT-E3/45 is ideal for use in the automotive industry, for use in the consumer electronics industry and for general industrial applications.
The UG10GCT-E3/45 offers excellent performance, low reverse leakage and fast reverse recovery. It utilizes a PNP resistive-fuse array with a low forward voltage drop and low device resistance to provide high performance thermal and power management. This product also provides a robust and efficient platform to improve circuit protection and maintain optimal performance in harsh environments.
The UG10GCT-E3/45 is designed with a wide array of features to optimize the performance of the device. It offers low forward voltage drop which helps reduce power dissipation and minimize design complexity. The device also offers a low reverse voltage leakages and fast reverse recovery allowing for improved system efficiency. Lastly, the device offers robust protection against static discharge ensuring the device is not damaged during the handling of the product.
The UG10GCT-E3/45 is designed using a rectifier circuit array construction with Schottky barriers. This type of configuration allows for higher current pulses, greater efficiency, and improved forward voltage as compared to traditional rectifier circuit designs. The device utilizes several diodes in a single chip array to provide a high level of performance over a wide range of temperature and operating conditions.
The working principle of the UG10GCT-E3/45 is based on the basic diode bridge rectifier circuit. The device contains one or more diodes connected in parallel between the input and output terminals. When the AC input voltage is applied, the diodes will selectively conduct depending on the polarity of the input voltage. The output voltage is a rectified version of the input voltage with both positive and negative feed-forward components.
The UG10GCT-E3/45 is capable of handling a wide range of current loads and is ideal for use in applications such as voltage regulator and system level control, particularly in the automotive industry. The rectifier offers excellent performance with both high frequency, low frequency, and transient loads. With its robust design and excellent thermal characteristics, the UG10GCT-E3/45 can be used in a wide variety of power management and system level applications.
In conclusion, the UG10GCT-E3/45 is an ideal device for power management and system level control applications in the automotive, consumer electronics, and industrial markets. It provides reliable and efficient operation over a wide range of temperature and operating conditions. The UG10GCT-E3/45 is also capable of handling high current loads and offers excellent thermal characteristics. The device utilizes a PNP resistive-fuse array which provides operating stability and low forward voltage drop while providing robust protection against static discharge and improved reverse recovery performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UG1006G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 400V 10A T... |
UG1007G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 500V 10A T... |
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UG1006GHC0G | Taiwan Semic... | 0.23 $ | 1000 | DIODE ARRAY GP 400V 10A T... |
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UG1002-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
UG1003-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
UG1004-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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UG10CCT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
UG10FCT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE ARRAY GP 300V 5A TO... |
UG10GCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 400V 5A TO... |
UG10BCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 100V 5A TO... |
UG10CCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 150V 5A TO... |
UG10DCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 200V 5A TO... |
UG10FCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 300V 5A TO... |
UG10GCTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP 400V 5A TO... |
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