Allicdata Part #: | UGF8JC0G-ND |
Manufacturer Part#: |
UGF8J C0G |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 8A ITO220AC |
More Detail: | Diode Standard 600V 8A Through Hole ITO-220AC |
DataSheet: | UGF8J C0G Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.61740 |
50 +: | $ 0.49405 |
100 +: | $ 0.43231 |
500 +: | $ 0.33527 |
1000 +: | $ 0.26470 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.9V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 30µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UGF8J C0G Application Field and Working Principle
The UGF8J C0G is a unique type of rectifying diode that finds application in different types of circuits. Like the other diodes it consists of a semiconductor material that is capable of conducting electric current in one direction and blocking electric current in the other direction. Although it is used mainly in field effect transistor applications, it should be noted that the same rectifying diode can be used as a substitute for any kind of normal rectifying diode. This makes it an ideal choice for many types of general-purpose or industrial circuits.
The UGF8J C0G rectifying diode is a type of diode that is specially designed to work in high or sub-zero temperature conditions. This makes it ideal for use in applications that require high temperature operation or extreme temperatures. It is also perfect for use in automobile and aerospace applications as it is highly resistant to wear and tear and is also capable of working in extremely harsh conditions.
The UGF8J C0G rectifying diode is a type of diode that is based on the Schottky effect. This effect is one of the most important principles used in the field of semiconductor technologies and involves the ability of a diode to conduct current more efficiently when the voltage potential is lower than a certain threshold. Due to this effect, the voltage drop across the UGF8J C0G rectifying diode is much lower when compared to other rectifying diodes.
The working principle behind the UGF8J C0G rectifying diode can be easily understood with the help of a simple diagram. As shown in the diagram, the rectifying diode consists of a metal-oxide-semiconductor or MOS structure. The MOS consists of two layers, a source layer and a drain layer. The source layer consists of a terminal connected to the anode and a terminal connected to the cathode. The drain layer consists of a terminal connected to the anode and another terminal connected to the cathode.
The UGF8J C0G rectifying diode works by allowing a current to flow from the anode to the cathode when a positive potential (voltage) is applied across the terminals. However, no current will be able to flow when a negative potential is applied. This is because any potential which is lower than the threshold voltage will cause the electrons to become trapped in the MOS structure and therefore cannot pass through the diode.
In conclusion, the UGF8J C0G rectifying diode is a unique type of diode which finds applications in different types of circuits. It is designed to work in high or sub-zero temperature conditions and also provides improved voltage regulation and power efficiency. It is also perfect for use in automotive and aerospace applications due to its ability to withstand extreme temperatures. Finally, its working principle is based on the Schottky effect which allows for improved current flow when the potential difference is lower than the threshold voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UGF8J C0G | Taiwan Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JHC0G | Taiwan Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JD C0G | Taiwan Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8BT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
UGF8DT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
UGF8JDHC0G | Taiwan Semic... | 0.35 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8BTHE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
UGF8DTHE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
UGF8FT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 300V 8A IT... |
UGF8GT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 8A IT... |
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UGF8GTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
UGF8JT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JTHE3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
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UGF8HCTHE3/45 | Vishay Semic... | 0.63 $ | 1000 | DIODE ARRAY GP 500V 4A IT... |
UGF8JCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 600V 4A IT... |
UGF8JCTHE3/45 | Vishay Semic... | 0.67 $ | 1000 | DIODE ARRAY GP 600V 4A IT... |
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