Allicdata Part #: | UGF8JDC0G-ND |
Manufacturer Part#: |
UGF8JD C0G |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 8A ITO220AC |
More Detail: | Diode Standard 600V 8A Through Hole ITO-220AC |
DataSheet: | UGF8JD C0G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.28775 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.3V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 500nA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | ITO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UGF8JD C0G Application Field and Working Principle
UGF8JD C0G is an abbreviation of Unipolar junction field-effect Transistor, with an 8mm Width Junction, and a high output Capacitance of 0.2-1nF. This type of device is a type of semiconductor and is widely used in a variety of applications.
Application Field of UGF8JD C0G
UGF8JD C0G devices are mostly used in electrostatic discharge (ESD) protection applications, since they contain guard-ring structures that can minimize the surge energy. They are usually used to protect sensitive electronic components such as ICs and logic gates. These devices are also widely used in differential signaling, CMOS inverters, and load switching.
Working Principle of UGF8JD C0G
UGF8JD C0G devices work by switching the transistor gate between two different gate drive states. When the gate drive is in the low state, the transistor gate is connected to ground, while in the high state, the gate is connected to the transistor drain. This can cause the transistor\'s drain-source voltage to rise, allowing current to flow between the drain and the source. The transistor is then switched off when the gate voltage returns to the low state.
The UGF8JD C0G devices are also equipped with a built-in guard-ring structure, which can help reduce the ESD surge energy. The field-effect transistor is connected to the guard-ring terminal, which connects to the transistor drain. This helps reduce the voltage stress on the gate and reduces the gate-source capacitance.
Advantages of UGF8JD C0G Applications
UGF8JD C0G offers a number of advantages over traditional power transistors. For example, they consume less power, require less current to operate, and are more resistant to thermal runaway. In addition, they provide excellent ESD protection and can be used in high-density applications. Furthermore, they offer high gain, low noise, and low distortion.
Conclusion
UGF8JD C0G is a type of semiconductor device that is widely used in a variety of applications. It has a guard-ring structure that can minimize the surge energy and is often used in ESD protection applications. It also offers a number of advantages over traditional power transistors, such as low power consumption, high gain, and low noise.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UGF8J C0G | Taiwan Semic... | 0.68 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JHC0G | Taiwan Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JD C0G | Taiwan Semic... | 0.32 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8BT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
UGF8DT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
UGF8JDHC0G | Taiwan Semic... | 0.35 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8BTHE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 100V 8A IT... |
UGF8DTHE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A IT... |
UGF8FT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 300V 8A IT... |
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UGF8GTHE3/45 | Vishay Semic... | 0.62 $ | 1000 | DIODE GEN PURP 400V 8A IT... |
UGF8JT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A IT... |
UGF8JTHE3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 600V 8A IT... |
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UGF8JCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 600V 4A IT... |
UGF8JCTHE3/45 | Vishay Semic... | 0.67 $ | 1000 | DIODE ARRAY GP 600V 4A IT... |
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