UGF8JD C0G Allicdata Electronics
Allicdata Part #:

UGF8JDC0G-ND

Manufacturer Part#:

UGF8JD C0G

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 8A ITO220AC
More Detail: Diode Standard 600V 8A Through Hole ITO-220AC
DataSheet: UGF8JD C0G datasheetUGF8JD C0G Datasheet/PDF
Quantity: 1000
1000 +: $ 0.28775
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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UGF8JD C0G Application Field and Working Principle

UGF8JD C0G is an abbreviation of Unipolar junction field-effect Transistor, with an 8mm Width Junction, and a high output Capacitance of 0.2-1nF. This type of device is a type of semiconductor and is widely used in a variety of applications.

Application Field of UGF8JD C0G

UGF8JD C0G devices are mostly used in electrostatic discharge (ESD) protection applications, since they contain guard-ring structures that can minimize the surge energy. They are usually used to protect sensitive electronic components such as ICs and logic gates. These devices are also widely used in differential signaling, CMOS inverters, and load switching.

Working Principle of UGF8JD C0G

UGF8JD C0G devices work by switching the transistor gate between two different gate drive states. When the gate drive is in the low state, the transistor gate is connected to ground, while in the high state, the gate is connected to the transistor drain. This can cause the transistor\'s drain-source voltage to rise, allowing current to flow between the drain and the source. The transistor is then switched off when the gate voltage returns to the low state.

The UGF8JD C0G devices are also equipped with a built-in guard-ring structure, which can help reduce the ESD surge energy. The field-effect transistor is connected to the guard-ring terminal, which connects to the transistor drain. This helps reduce the voltage stress on the gate and reduces the gate-source capacitance.

Advantages of UGF8JD C0G Applications

UGF8JD C0G offers a number of advantages over traditional power transistors. For example, they consume less power, require less current to operate, and are more resistant to thermal runaway. In addition, they provide excellent ESD protection and can be used in high-density applications. Furthermore, they offer high gain, low noise, and low distortion.

Conclusion

UGF8JD C0G is a type of semiconductor device that is widely used in a variety of applications. It has a guard-ring structure that can minimize the surge energy and is often used in ESD protection applications. It also offers a number of advantages over traditional power transistors, such as low power consumption, high gain, and low noise.

The specific data is subject to PDF, and the above content is for reference

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