UH3BHE3_A/I

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.05V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	40ns
Current - Reverse Leakage @ Vr:	5µA @ 100V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AB, SMC
Supplier Device Package:	DO-214AB (SMC)
Operating Temperature - Junction:	-55°C ~ 175°C
Base Part Number:	UH3B

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Introduction

UH3BHE3_A/I is a Single Rectifier diode with a maximum current rating of 17.2A, a maximum rated forward voltage of 800V and an average forward current of 17A. It is designed to be used in a variety of applications, including power rectification, free-wheeling, motor start-up, switching, and RF protection. In this guide, we will be discussing the application fields and working principles of the UH3BHE3_A/I.

Application Fields

The UH3BHE3_A/I can be used in a variety of applications, due to its ability to withstand temperatures up to 175°C and its low power loss features. This makes it an ideal choice for high power applications requiring a high switching frequency, as it can withstand high power and provide excellent rectification performance. The UH3BHE3_A/I can also be used in DC to DC converters, such as flyback or forward converters, where it can provide improved conversion efficiency and higher switching speeds. In addition, the diode is designed to be used in power factor correction (PFC) circuits, allowing it to help regulate the power factor of AC to DC converters and reduce power loss. Lastly, the UH3BHE3_A/I can be used in motor drive circuits, allowing it to reduce motor speed variation and enable better motor operation. The diode is also well-suited to use in pulse-width modulation (PWM) circuits, as it can provide fast switching operation at high frequencies without increasing power loss.

Working Principle

The UH3BHE3_A/I utilizes a silicon structure, wherein a p-type semiconductor layer is layered had on the anode side and an n-type semiconductor layer is layered had on the cathode side. This structure makes the diode a unidirectional device, meaning that current only flows from the anode to the cathode. When the anode side is connected to a positive voltage and the cathode side is connected to a negative voltage, the N-type layer acts as a switch, allowing current to flow through the diode. As the voltage drops below the voltage threshold of the diode, the N-type layer is turned off and current no longer flows. This process allows the diode to act as a rectifier, ensuring that the current only flows in one direction.

Conclusion

The UH3BHE3_A/I is a single rectifier diode designed for use in a variety of applications, including power rectification, free-wheeling, motor start-up, switching, and RF protection. It is able to withstand temperatures up to 175°C and features a low power loss design, making it an ideal choice for high power applications requiring a high switching frequency. The diode utilizes a silicon structure consisting of a p-type semiconductor layer on the anode side and an n-type semiconductor layer on the cathode side, and this structure allows the diode to act as a unidirectional device, therefore allowing current to only flow from the anode to the cathode.

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