UH4PCCHM3/86A

Series:	eSMP®
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io) (per Diode):	2A
Voltage - Forward (Vf) (Max) @ If:	1.05V @ 2A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	25ns
Current - Reverse Leakage @ Vr:	5µA @ 150V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	TO-277, 3-PowerDFN
Supplier Device Package:	TO-277A (SMPC)
Base Part Number:	UH4PCC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

UH4PCCHM3/86A is a member of high performance rectifier array diodes from ST Microelectronics, developed for applications such as power supplies, motor drives, and motor control. It allows for design flexibility and has improved electrical performance by reducing the series resistance, compared to clamped-diodes, reducing reverse-recovery time, and reducing power dissipation. This makes it capable of providing high graphical performance and features, with the installation of high voltage, high current, fast-switching rectifier power modules.

Application Field

The UH4PCCHM3/86A Rectifier Array Diode can be used in a variety of applications in a number of sectors. These diodes are often used in power supply or motor control applications, such as solar inverters, home appliances, variable speed drives, welding machines, ironing machines, spa controls, and robotics. Due to its fast switching speeds, the diode is also often used in high-speed applications such as computing and communications.

Working Principle

The UH4PCCHM3/86A Rectifier Array Diode is based on silicon rectifier technology. It uses a series of p-n junctions connected in parallel and arranged in an alternating hammer array pattern in order to reduce the overall geometry, which increases the breakdown voltage and current rating while reducing the power dissipation. When the forward bias is applied, the p-n junction starts to carry current and becomes an ohmic region. This allows a current flowing from cathode to anode. When the reverse bias is applied, the p-n junction enters a breakdown region because of high electric field and current begins to flow from anode to cathode. This region is known as a “junction avalanche” breakdown region. Because of the hammer array pattern, the gate’s current flow path has been improved, which leads to a decrease in series resistance, faster switching speed, and a smaller total thermal dissipation. Furthermore, the UH4PCCHM3/86A Rectifier Array Diode minimizes the reverse recovery time and can also reduce the production cost significantly by using less pins, less substrate, and smaller components.

Conclusion

In conclusion, the UH4PCCHM3/86A Rectifier Array Diode provides a number of advantages and features that makes it an excellent choice for power supplies, motor drives, and motor control applications. Its improved electrical performance, fast switching speeds, and low power dissipation makes it ideal for high-speed applications such as computing and communications. It also features a hammer array pattern that reduces the series resistance and increases the overall graphic performance.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description