UMA8NTR Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Base Part Number:	MA8
Supplier Device Package:	UMT5
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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Introduction to UMA8NTR
UMA8NTR is a pre-biased Bipolar Junction Transistor (BJT) technology array. It is designed to improve power efficiency and enable higher saturation current (Isat) within a single package. This makes it suitable for a wide range of applications, from high-current power electronics to low-noise analog signals. It is designed to improve signal and power conversion performance, reduce system costs, and enable faster signal transmission.The UMA8NTR technology is composed of four BJT arrays: two double-diffused ones, each with three drain contact areas; one short-circuit protection array; and one pre-biased array. These BJTs, connected in parallel, together form a single package and the electrical connection can be easily adapted to various application conditions.UMA8NTR Applications
UMA8NTR is versatile and is widely used in a range of applications, including:

• Power Electronics: UMA8NTR can be used in high-current applications, such as switchers, inverters, and motor control circuits. It can reduce system cost and improve power efficiency by improving thermal design and power dissipation.
• Analog Circuits: UMA8NTR can be used to improve analog performance in noise-sensitive applications, such as medical and consumer electronic consumer applications. It has a high maximum IC, which minimizes differential noise and enables higher speed performance.
• Communication Circuits: UMA8NTR can reduce power consumption and enable a faster transmission rate. It can also reduce system cost by enabling the integration of multiple components into a single package.

UMA8NTR Working Principle
The UMA8NTR technology senses the drain current through the pre-biased array. The sensing current is then amplified and used to control voltage and power conversion efficiency. This technology enables higher saturation currents, improved power efficiency and improved signal transmission.The four BJT arrays are connected in parallel, enabling higher current handling capability. The pre-biased array is designed to improve the power efficiency by reducing the voltage drop and increasing the output current capability.The short-circuit protection array is designed to protect the device from damage due to high current or voltage levels. It will automatically shut down in case of over-current or over-voltage.The two double-diffused BJT arrays provide higher current handling capability and faster switching speed. It is designed to reduce the number of discrete components by integrating multiple components into a single package.Conclusion
UMA8NTR is a pre-biased Bipolar Junction Transistor technology that is used to improve power efficiency and enable higher saturation current within a single package. Its versatile design and improved performance make it suitable for use in a wide range of applications from high-current power electronics to low-noise analog signals. Its improved power efficiency and signal transmission make it ideal for applications such as power electronics, analog circuits, and communication circuits. It is designed to reduce system costs, enable faster signal transmission, and provide protection from high current or voltage levels.

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