UMAF5818 Allicdata Electronics

UMAF5818 Discrete Semiconductor Products

Allicdata Part #:

UMAF5818TR-ND

Manufacturer Part#:

UMAF5818

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SCHOTTKY 30V 1A ULTRAMITE
More Detail: Diode Schottky 30V 1A Surface Mount Ultramite™
DataSheet: UMAF5818 datasheetUMAF5818 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: Ultramite™
Supplier Device Package: Ultramite™
Operating Temperature - Junction: -50°C ~ 125°C
Base Part Number: UMAF5818
Description

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Diodes are a type of semiconductor that allows an electrical current to flow in one direction only. They are also known as rectifiers, since they work by rectifying, or changing, the direction of an electrical current. The UMAF5818 is a single rectifier diode designed for applications that require high voltages and fast switching. It has a voltage rating of up to 600 volts and can be used in a variety of automotive, solar, and power management applications.

The UMAF5818 is a bridge-style diode, which means it features four semiconductor layers. The first layer consists of an n-type material, the second layer is composed of a p-type material, the third layer is an n-type material, and the fourth layer is a p-type material. These four layers form a bridge, which allows the electrical current to flow in one direction only. The UMAF5818 is rated for a forward current of up to 1.2 amps, a reverse voltage of up to 600 volts, and a peak reverse voltage of up to 2000 volts.

The UMAF5818 is designed to provide fast switching times, with a switching speed of up to 200 volts per microsecond. This makes it ideal for applications such as automotive ignition systems, power supplies, and other applications that need to switch rapidly. Additionally, the UMAF5818\'s reverse leakage is rated at 100 microamps, which is higher than many other diodes on the market.

The UMAF5818 is also designed to be thermal and vibrationally resistant, making it well-suited for use in automotive and industrial applications. Its heavy duty construction and low forward voltage drop make it highly efficient in those environments. Additionally, its packaged design allows for easy free-body mounting on insulated surfaces or electronic circuits.

The working principle behind the UMAF5818 is based on the fact that when current passes through the diode it creates an electrical field, which causes electrons to move from the n-type material to the p-type material. The resulting flow of electrons creates a voltage drop between the two layers, which is known as the forward voltage drop. The UMAF5818\'s forward voltage drop is designed to be low enough that it does not significantly hinder the flow of current, but high enough to protect the device from reverse current.

In summary, the UMAF5818 is a single rectifier diode designed for applications requiring high voltages and fast switching. Its bridge-style four-layer construction allows it to rapidly switch electrical current in one direction only, while its rated forward current, reverse voltage, and peak reverse voltage make it suitable for a variety of automotive, solar, and power management applications. Additionally, its packaged design makes it easy to mount in free-body spaces or circuits, and its low forward voltage drop makes it highly efficient and effective in a range of environments.

The specific data is subject to PDF, and the above content is for reference

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