
UMB3NTN Discrete Semiconductor Products |
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Allicdata Part #: | UMB3NTNTR-ND |
Manufacturer Part#: |
UMB3NTN |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS DUAL PNP UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.04472 |
6000 +: | $ 0.04024 |
15000 +: | $ 0.03577 |
30000 +: | $ 0.03354 |
75000 +: | $ 0.02981 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | MB3 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UMB3NTN transistor array is a pre-biased transistor used in a wide variety of applications. It is a three-terminal device comprising NPN and PNP transistors in a single package. The UMB3NTN is designed for use in consumer and industrial equipment and is suited for use in high-frequency applications. It has an exceptionally low distortion and low noise. This makes it a highly reliable, cost-effective device for many different applications.
The UMB3NTN is composed of two transistors: an NPN transistor and a PNP transistor. The NPN transistor is the driving element and provides the voltage gain while the PNP transistor provides the current gain. The transistors are bonded together in a unitary package in order to reduce the overall package size. The transistors can be either in single, dual, or multiple package configurations.
The UMB3NTN transistors are configured to be pre-biased. This means that the transistors are in a state of equilibrium prior to use. This ensures that the device will be able to handle fast switching signals without requiring external components to bias the transistors. This reduces the component count and lowers costs. The pre-biased configuration also makes the UMB3NTN more immune to noise and crosstalk that may occur in applications.
The UMB3NTN is an ideal device for high-frequency applications such as radio receivers, televisions, and mobile phones. The pre-biased transistors provide high speed and low distortion in these applications. The UMB3NTN also has high power handling capabilities and can withstand high voltages and currents. Additionally, the transistors have a low noise profile making it suitable for low frequency applications such as communication networks, audio, and power supplies.
The UMB3NTN’s working principle is based on the fact that an NPN transistor, when connected to a PNP transistor, is a self-biasing amplifier. When an input voltage is applied to the base, the NPN transistor will amplify the signal and the PNP transistor will provide current gain. The UMB3NTN transistors are also capable of providing high-voltage and high-current gain, making them ideal for high-power applications.
The UMB3NTN is a versatile and reliable device for a wide range of applications. Its pre-biased configuration makes it much more suitable for high-frequency applications, and its low distortion and noise levels make it well suited for low frequency and audio applications. Additionally, its high power handling capabilities make it suitable for a variety of power supply applications. Thanks to its many advantages, the UMB3NTN is an essential component for many different systems.
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