UMB3NTN Allicdata Electronics

UMB3NTN Discrete Semiconductor Products

Allicdata Part #:

UMB3NTNTR-ND

Manufacturer Part#:

UMB3NTN

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL PNP UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: UMB3NTN datasheetUMB3NTN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04472
6000 +: $ 0.04024
15000 +: $ 0.03577
30000 +: $ 0.03354
75000 +: $ 0.02981
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: MB3
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 5mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The UMB3NTN transistor array is a pre-biased transistor used in a wide variety of applications. It is a three-terminal device comprising NPN and PNP transistors in a single package. The UMB3NTN is designed for use in consumer and industrial equipment and is suited for use in high-frequency applications. It has an exceptionally low distortion and low noise. This makes it a highly reliable, cost-effective device for many different applications.

The UMB3NTN is composed of two transistors: an NPN transistor and a PNP transistor. The NPN transistor is the driving element and provides the voltage gain while the PNP transistor provides the current gain. The transistors are bonded together in a unitary package in order to reduce the overall package size. The transistors can be either in single, dual, or multiple package configurations.

The UMB3NTN transistors are configured to be pre-biased. This means that the transistors are in a state of equilibrium prior to use. This ensures that the device will be able to handle fast switching signals without requiring external components to bias the transistors. This reduces the component count and lowers costs. The pre-biased configuration also makes the UMB3NTN more immune to noise and crosstalk that may occur in applications.

The UMB3NTN is an ideal device for high-frequency applications such as radio receivers, televisions, and mobile phones. The pre-biased transistors provide high speed and low distortion in these applications. The UMB3NTN also has high power handling capabilities and can withstand high voltages and currents. Additionally, the transistors have a low noise profile making it suitable for low frequency applications such as communication networks, audio, and power supplies.

The UMB3NTN’s working principle is based on the fact that an NPN transistor, when connected to a PNP transistor, is a self-biasing amplifier. When an input voltage is applied to the base, the NPN transistor will amplify the signal and the PNP transistor will provide current gain. The UMB3NTN transistors are also capable of providing high-voltage and high-current gain, making them ideal for high-power applications.

The UMB3NTN is a versatile and reliable device for a wide range of applications. Its pre-biased configuration makes it much more suitable for high-frequency applications, and its low distortion and noise levels make it well suited for low frequency and audio applications. Additionally, its high power handling capabilities make it suitable for a variety of power supply applications. Thanks to its many advantages, the UMB3NTN is an essential component for many different systems.

The specific data is subject to PDF, and the above content is for reference

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