UMB4NTN Allicdata Electronics

UMB4NTN Discrete Semiconductor Products

Allicdata Part #:

UMB4NTNTR-ND

Manufacturer Part#:

UMB4NTN

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS DUAL PNP UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: UMB4NTN datasheetUMB4NTN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04472
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: MB4
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Digital systems, such as computers, video games, and aircraft control systems, are essential components of the modern world. Traditional electronic components used to construct these systems, however, can be ineffective in heavily changing environments, such as those found in medical, telecommunications and military applications. To address these issues, UMB4NTN transistors were developed. UMB4NTN transistors are highly specialized array devices that are well-suited for the high-speed and high-power requirements of many modern digital systems.UMB4NTN transistors are bipolar, pre-biased transistors that operate in a wide range of temperatures, from -55°C to +150°C. The transistors have a special pre-biased design that allows them to maintain high performance in varying temperature ranges. This allows for stability and consistency in application fields that may have a large range of temperature variation. Additionally, the transistors are constructed in an array form factor, allowing for easy and efficient application to large and complex digital systems.The UMB4NTN transistors operate using a unique current mirroring system. The current mirror is composed of several input devices, including a base evener, controllable drain, and current source. The base evener allows the transistor structure to maintain balance between the various levels of the array. The controllable drain helps to optimize the current mirroring process. Finally, the current source is responsible for powering the devices and creating the initial voltage bias.These various components of the current mirror then function together to create the UMB4NTN transistor’s unique power amplification. The power amplification of the UMB4NTN transistors can be specifically tuned for specific application fields and requirements. This allows for the high-reliability, high-speed and high-power operation to be applied to a wide range of digital systems. The UMB4NTN Transistor’s design and operation also ensures an exceptional level of thermal efficiency. This is achieved through the array form factor and the pre-biased design of the transistors. The transistors are designed with a highly efficient cooling layer, ensuring that heat is dissipated effectively and efficiently. This thermal efficiency allows the transistors to be used in high heat environments, such as industrial and automotive systems, without significant thermal issues.Overall, UMB4NTN transistors are a unique and highly specialized array device specifically designed to address the needs of digital systems. The transistors pre-biased design, current mirroring and thermal efficiency create an excellent level of performance in application fields with large temperature ranges. The transistors’ ease of application and thermal efficiency also allow for efficient integration into a wide range of digital systems.

The specific data is subject to PDF, and the above content is for reference

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