UMB9NTN Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	UMT6
Base Part Number:	MB9

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The UMB9NTN pre-biased array offers high performance in various applications. It is composed of nine NPN (negative-positive-negative) transistors, known as BJTs (Bipolar Junction Transistors). These transistors are pre-biased and are commonly used in radio frequency or telecommunication applications.The UMB9NTN array can be used in various applications, such as current amplification, switching, noise protection, and signal conditioning. The transistor array is designed to have minimal voltage and current loss, making it an ideal choice for system designs that require power efficiency.The working principle of the UMB9NTN pre-biased array begins with the first transistor base being connected to the collector terminal. This charge flows through a series of resistors which reduce the voltage. As this charge passes through the resistors, it is divided into three parts, one part to go to each transistor base. This is how each transistor becomes pre-biased. When a voltage is applied to the first transistor base, current will flow through both the first and the third transistor. Current then passes through the other transistors, one after the other. This will lead to the desired voltage appearing at the collector terminal. The current passing through the transistor array is determined by the resistance of the resistor biases, as well as the input voltage and current.In addition to its high efficiency, the UMB9NTN pre-biased array is also designed to have high frequency operation. This allows it to be used in higher frequency applications, such as radio receivers and modulators. This combination of high efficiency, low loss, and high frequency operation makes the UMB9NTN pre-biased array a great choice for applications where power efficiency and reliability are essential.When selecting the UMB9NTN pre-biased array for a system, it is important to consider the current requirements of the system, as well as the voltage rating of the transistors. It is also important to consider the ambient temperature and the environment in which the array will be operated. Proper selection of the UMB9NTN pre-biased array can ensure reliable operation for the system for a long time without any issues.Overall, the UMB9NTN pre-biased array is ideal for applications such as current amplification, switching, noise protection, and signal conditioning. It is designed to have minimal voltage and current loss, allowing it to be used in power-efficient systems. The combination of high efficiency, low loss, and high frequency operation makes the UMB9NTN pre-biased array a great choice for applications where both reliability and power efficiency are essential. When selecting the UMB9NTN pre-biased array, it is important to consider all associated parameters such as the current requirements, voltage rating, ambient temperature and the environment in which the array will be operated.

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