
UMC2NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMC2NTR-ND |
Manufacturer Part#: |
UMC2NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W UMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | MC2 |
Supplier Device Package: | UMT5 |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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President of Japan-based UMC2NTR pointed out that, the company's pre-biased transistor array, UMC2NTR, offers excellent performance for many applications, especially in the field of power control. According to the official website, the core technique of UMC2NTR is pre-biased transistor arrays. The pre-biased transistor array technology enables optimal combination of layout and circuitry, allowing to overcome the problems of size/frequency/heat dissipation. UMC2NTR has been widely used in the industrial, automotive and consumer applications.
UMC2NTR is based on Bipolar Junction Transistor (BJT) Arrays, Pre-Biased(BPA) technology. The technology provides the advantages of lower cost, low on-resistance, faster switching, and higher current capacity. Bipolar junction transistors (BJTs) are most commonly used in the field of power control. The design of UMC2NTR combines BJT transistors arranged in a rectangular package, with a bias resistor connected to the source terminal at the outermost corner. The combination of transistors and bias resistors in the UMC2NTR provides a simple, yet highly efficient and robust solution for the implementation of pre-biased BJT (BPA) circuit.
The main working principle of UMC2NTR can be divided into two parts: Low-side pre-biased circuit and high-side pre-biased circuit. The low-side pre-biased circuit requires a constant current to flow through the bias resistors, and the constant current creates a voltage drop on the pins of BJT transistors. This provides a constant biasing of the power transistor, which allows optimal operation at all times. The high-side pre-biased circuit is also similar, except that the biasing voltage is created by a constant voltage on the power transistor, rather than a constant current.
The UMC2NTR pre-biased circuits are ideal for power control and switching applications, as they require minimal circuitry, and can provide low losses, low noise, and high reliability. Furthermore, when combined with high-speed power transistors, UMC2NTR circuits can provide higher switching frequency, thus reducing the overall power converting loss, as well as improving the power efficiency.
The UMC2NTR transistor array technology is an invaluable tool that provides powerful solutions for power control and switching applications. It offers a cost-effective solution, with excellent performance. The pre-biased circuit technology of UMC2NTR allows for high-speed and high reliability power conversion, making it an ideal choice for many popular applications.
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