UMC3NT1G Discrete Semiconductor Products |
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Allicdata Part #: | UMC3NT1GOSTR-ND |
Manufacturer Part#: |
UMC3NT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W SC70 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | UMC3NT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03226 |
6000 +: | $ 0.02805 |
15000 +: | $ 0.02384 |
30000 +: | $ 0.02244 |
75000 +: | $ 0.02104 |
150000 +: | $ 0.01870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SC-88A (SC-70-5/SOT-353) |
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?The UMC3NT1G is one of the latest members of Bipolar Junction Transistor (BJT) families specifically designed for an array of high current applications. A device of this type is pretty energy efficient yet has great efficacy for the applications for which it is meant.
Unlike many other transistors available in the market, the UMC3NT1G provides excellent surge current and low collector to emitter saturation voltages. As a BJT device, it also has outstanding high current gain and low noise factor. The device also has wide power supply range and excellent thermal noisefree performance. Its output impedance is also low.
The features of the UMC3NT1G make it an attractive option for a wide array of pre biased applications such as lighting control, current sensing, load control and power distribution. The power supply voltage of this device can easily be connected 33 volts to 50 volts. This makes it ideal for LED string lighting, which requires its power supply to be within the range of 33 volts to 50 volts.
The working principle of the UMC3NT1G involves locating two N-type BJTs within a single package. The anode (collector) of the lower-level BJT is connected to the ground and the cathode (emitter) of the higher-level BJT is connected to the positive supply voltage. The drain of the lower-level BJT is connected to the common emitter of the higher-level BJT. The following figure illustrates the connection details of the UMC3NT1G.
When the signal is provided to the BJT, the voltage between the collector and emitter (Vce) of the lower-level BJT drops rapidly. This causes the current in the lower-level BJT to flow in to the higher-level BJT, resulting in an increase in the voltage between the collector and emitter of the higher-level BJT (Vce_high).
This voltage increase between the collector and emitter of the higher-level BJT causes more current to flow in the higher-level BJT reducing the voltage between the collector and the emitter of the lower-level BJT. This oscillation between the two BJTs and the voltage between the collector and emitter causes the UMC3NT1G to function as an amplifier and to scale the signal such that the peak voltage of the output signal is equal to the power supply voltage. This enables the UMC3NT1G to be connected to other amplifiers and used in a variety of applications.
In conclusion, the UMC3NT1G is an excellent choice for pre biased applications due to its outstanding high current gain, low noise factor, wide power supply range and thermal noisefree performance. Its working principle involves connecting two N-type BJTs within the same package and taking advantage of the oscillation between them to amplify the signal. This makes it an ideal device for LED string lighting and other similar applications.
The specific data is subject to PDF, and the above content is for reference
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