UMC4NQ-7

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The UMC4NQ-7 is a pre-biased array of bipolar junction transistors (BJT) manufactured by the Foshan Semiconductor Company. The UMC4NQ-7 is designed for high power switching applications and has been designed to provide a high level of current gain and stability. This makes it suitable for a wide range of applications including motor control, HVAC, automotive, industrial, and telecommunications applications.

The UMC4NQ-7 is a four-transistor device, each with a base emitter voltage of 5V. Each transistor is pre-biased with a voltage divider. This ensures that all transistors are operating at the same bias point. This also ensures that the device is very stable in terms of current gain and temperature. The UMC4NQ-7 also features a temperature compensation design that prevents temperature-induced current instabilities.

The UMC4NQ-7 is designed to offer excellent protection against current surges and voltage transients. The device also offers protection against overvoltage, reverse polarity, and overcurrent. This makes the device suitable for applications that require high levels of protection against overloads, shorts, and spikes.

The UMC4NQ-7 is designed for use in power switching applications where high current gain is important. The device has a maximum output current of up to 70A and can operate up to a frequency of 2GHz. The device is also designed for high efficiency and can provide up to 70% efficiency when driven with a 5V supply. The device is also designed to operate with a wide range of temperatures, and can withstand temperatures up to 150°C.

The UMC4NQ-7 is a high-performance pre-biased array of bipolar junction transistors. It is a versatile device that can be used in a wide range of applications, thanks to its high current gain and robust protection circuit. The device is highly reliable and stable, making it suitable for use in high power switching and mission-critical applications.

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