UMC5NT2G Discrete Semiconductor Products |
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Allicdata Part #: | UMC5NT2GOSTR-ND |
Manufacturer Part#: |
UMC5NT2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BRT DUAL 50V SOT-353 |
More Detail: | Transistor 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 1... |
DataSheet: | UMC5NT2G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03226 |
6000 +: | $ 0.02805 |
15000 +: | $ 0.02384 |
30000 +: | $ 0.02244 |
75000 +: | $ 0.02104 |
150000 +: | $ 0.01870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Applications: | -- |
Voltage - Rated: | 50V |
Current Rating: | 100mA |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SC-88A (SC-70-5/SOT-353) |
Base Part Number: | UMC5 |
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The UMC5NT2G is a special purpose transistor, most commonly used in telecommunication applications such as high-power amplifiers, switching applications and antenna interface circuits. It is a three terminal device that can be configured as either an N-type field-effect transistor (NFET) or a P-type field-effect transistor (PFET).
The working principle of the UMC5NT2G is based on the fact that an N-type or P-type material has a different number of electrons in their atoms than a particular semiconductor material. When a potential or an electrical charge is applied to the semiconductor material, the number of electrons that are held in this material’s atoms increases or decreases accordingly. This difference in charge between the two materials is known as a potential barrier. The potential barrier can be modulated by changing the amount of charge applied to the material either by controlling the voltage or changing the electrical current. This modulation of the potential barrier can be used to modulate the current flow through the device and thus the UMC5NT2G can be used for switching and controlling the flow of electricity.
In addition to its use in switching applications, the UMC5NT2G can also be used in high-power amplifiers and antenna interface circuits. High-power amplifiers are used to boost the output voltage of a signal, such as in a car audio system, in order to increase the sound output. Since the UMC5NT2G has an inherent low-noise characteristic, it makes it ideal for use in high-power amplifiers. Another application that the UMC5NT2G is well suited for is antenna interface circuits, which are used to connect an antenna to a transmitter or receiver. The low-noise characteristics of the UMC5NT2G makes it especially suitable for this application.
The UMC5NT2G is a special purpose transistor with a wide range of applications, from high-power amplifiers and antenna interface circuits, to switching applications. Its unique properties make it an excellent choice for these various applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UMC5NT1G | ON Semicondu... | -- | 9000 | TRANS BRT NPN/PNP DUAL SO... |
UMC5NT2G | ON Semicondu... | 0.04 $ | 1000 | TRANS BRT DUAL 50V SOT-35... |
UMC5NT1 | ON Semicondu... | -- | 1000 | TRANS BRT NPN/PNP DUAL SO... |
UMC5NQ-7 | Diodes Incor... | 0.06 $ | 3000 | PREBIASTRANSISTORSOT353Pr... |
UMC5N-7 | Diodes Incor... | -- | 3000 | TRANS NPN/PNP PREBIAS SOT... |
UMC5NTR | ROHM Semicon... | -- | 18000 | TRANS NPN/PNP PREBIAS 0.1... |
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