UMC5NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMC5NTR-ND |
Manufacturer Part#: |
UMC5NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W UMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | UMC5NTR Datasheet/PDF |
Quantity: | 18000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V / 30 @ 10mA, 5V |
Base Part Number: | MC5 |
Supplier Device Package: | UMT5 |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms, 10 kOhms |
Resistor - Base (R1): | 47 kOhms, 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA, 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The UMC5NTR transistor is a high-performance array of five NPN transistors. It is a pre-biased device, which means that it can be used in a variety of applications without needing an additional bias circuit. The UMC5NTR has been specifically designed for switching, logic and general-purpose applications. The UMC5NTR features a wide range of operation temperatures, high-frequency capability, low power consumption, and low internal cancellation effects.
The UMC5NTR transistor is constructed using a multi-layer substrate, which consists of four layers. The top two layers are bonded together using a thick dielectric. The top layer acts as the drain region, while the bottom two layers act as the source region. The upper layer is also connected to the gate pin. This design allows for low impedance and high frequency capability, as well as low power consumption.
The primary working principle of the UMC5NTR is focused on the current flow between the source and drain regions. This is achieved by bias voltage applied to the substrate layers. This voltage modulates the current flow from the source region to the drain region. When a potential is applied to the gate pin, the base-emitter junction of the device conducts and the current flow increases. This change in current flow is then used as the basis for the applications of the UMC5NTR.
Applications of the UMC5NTR include logic switches and inverters, audio switches and volume controls, as well as RF switching and related applications. The UMC5NTR transistor is ideal for high-frequency switching operations due to its low on-resistance and high off current capabilities. Its low power consumption and wide operating temperature range also make it suitable for many industrial applications.
The UMC5NTR transistor is a versatile and reliable device. Its low power consumption and wide operating temperature range make it a great option for small and/or high-frequency applications. Additionally, its high-frequency capability and low on-resistance allow for fast switching operations in many applications. The UMC5NTR is an excellent choice for almost any analog or digital design requiring multiple NPN transistors.
The specific data is subject to PDF, and the above content is for reference
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