UMD12NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMD12NTR-ND |
Manufacturer Part#: |
UMD12NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | UMD12NTR Datasheet/PDF |
Quantity: | 3000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | MD12 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Bipolar junction transistors (BJT) are widely used in integrated circuits (ICs) applications. Bipolar transistors are the simplest form of transistor and are used for a range of different applications.The UMD12NTR is a good example of a pre-biased BJT array designed for use in a variety of applications. The following section will discuss the application field and working principle of the UMD12NTR.
Application
The UMD12NTR is designed for applications with demanding power requirements and high current gains. It has a high-power amplification of up to 600V/kHz, while providing a low total harmonic distortion (THD) of less than 0.1%. In addition, its high output power makes it suitable for use in high-power audio applications such as home theater systems and PA systems. The UMD12NTR is also suitable for use in motor controllers, industrial machinery, and automotive. The UMD12NTR is a pre-biased BJT array, which means it is pre-configured to provide a specific bias voltage and current. This makes it easy to install and eliminates the need for manual adjustment of the bias.
Working Principle
The UMD12NTR uses the simple bipolar junction transistor (BJT) structure to drive its high power applications. It consists of three BJTs in series—an NPN, a PNP, and a PNP-NPN. The NPN transistor is used as the base, with the two PNPs connected in series to make up the collector and emitter.The bias voltage for the NPN transistor is determined by the two PNPs’ bias voltages. The collector current is determined by the current flowing through the emitter and collector terminals. The gain of the circuit is determined by its base current, which is set by the bias voltage of the two PNPs.When the base current is increased, the current gain increases, allowing the UMD12NTR to operate at high power. The gain of the circuit is adjustable by changing the bias voltage of the two PNPs. Additionally, the UMD12NTR’s high output power makes it well-suited for a variety of applications, such as audio amplifiers, motor controllers, and industrial machinery.
In conclusion, the UMD12NTR is a pre-biased BJT array designed for high power applications. It has a high power amplification of up to 600V/kHz and a low THD of less than 0.1%. Additionally, its adjustable gain makes it well-suited for a variety of applications, such as audio amplifiers, motor controllers, industrial machinery, and automotive. The UMD12NTR is an ideal choice for those looking for a high-performance BJT array for their projects.
The specific data is subject to PDF, and the above content is for reference
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