
Allicdata Part #: | UMD2NTR-ND |
Manufacturer Part#: |
UMD2NTR |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.06000 |
10 +: | $ 0.05820 |
100 +: | $ 0.05700 |
1000 +: | $ 0.05580 |
10000 +: | $ 0.05400 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | *MD2 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UMD2NTR bipolar area, also known as the ultra-mobile double-gate (UMDG) transistor, is one of the latest advancements in the field of digital logic. Unlike traditional field-effect transistors (FETs), UMD2NTRs feature two surface gates, allowing them to control both current and voltage better than conventional FETs. This makes them highly ideal for a number of applications, especially in digital signal processing and high-frequency communication. Additionally, UMD2NTRs are notable for their low power consumption and space requirements, making them an ideal choice for power-efficient and cost-effective applications.
The working principle of UMD2NTRs is based on the same basic principles as other modern FETs: electrons from the source are attracted to the gate (gate-gate) and the current is proportional to the voltage difference between the two. The difference in the UMD2NTR is the presence of two gates instead of one. The two gates have different electrical characteristics, allowing them to be used to control both voltage and current flow simultaneously. In practice, this allows devices to be optimized for both speed and power efficiency, making them ideal for many applications.
One of the primary applications of UMD2NTRs is digital signal processing, where they can be used to amplify and shape signals more precisely than with traditional FETs. UMD2NTRs can also be used in high-bandwidth optical communications, enabling data to be sent across longer distances. Additionally, these devices can be used in a variety of battery-operated devices, such as digital cameras and mobile phones, for improved power efficiency. They also have great potential for use in solar cells, helping to reduce energy costs.
UMD2NTRs also offer advantages over other types of transistors in terms of pre-biasing. Pre-biasing is a process in which electronics components are adjusted beforehand to improve performance in certain conditions. With UMD2NTRs, the two gates can be pre-biased independently, which offers greater control over the overall performance of the device. This can be especially useful when it comes to high-speed applications, such as those used in optical communications.
Overall, UMD2NTRs represent the latest generation of digital logic components, offering better performance and greater flexibility. They are well-suited for a variety of digital signal processing, high-frequency communication, power-efficient and cost-effective applications. Their two gates can also be pre-biased independently, providing greater control and improved performance in certain conditions. With their many advantages, UMD2NTRs are likely to become even more widely used in the years to come.
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