UMD4NTR Allicdata Electronics

UMD4NTR Discrete Semiconductor Products

Allicdata Part #:

UMD4NTR-ND

Manufacturer Part#:

UMD4NTR

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP PREBIAS UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: UMD4NTR datasheetUMD4NTR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04472
6000 +: $ 0.04024
15000 +: $ 0.03577
30000 +: $ 0.03354
75000 +: $ 0.02981
Stock 3000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: *MD4
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW, 120mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms, 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The UMD4NTR application field and working principle is a type of transistor commonly used for amplifying electronic signals in both digital and analog applications. It is part of the bipolar junction transistor (BJT) family and is most commonly used in pre-biased arrays. The UMD4NTR has proven itself to be a very robust technology, with superior performance in a variety of different applications.

To understand how the UMD4NTR works, it is important to know the general structure of a bipolar junction transistor (BJT). As a BJT, it is composed of three main components: the emitter, the base and the collector. A current running through the emitter leaves the emitter junction to flow through the base, and then leaves the base junction to flow through the collector before exiting through the collector junction. This structure is responsible for the current amplification effect of the transistor. In the UMD4NTR application field, transistors are arranged in a pre-biased array in order to maximize the amount of current amplification produced by each device.

The UMD4NTR can also be used as a switch due to its ability to regulate current flow. When electric current is passed through the base of the UMD4NTR, the transistor will be essentially turned “on” and current will flow freely between the collector and emitter. When the current through the base is removed, the transistor will be essentially turned “off”, and current will not flow between the collector and emitter. This switching ability of the UMD4NTR is useful for designing power amplifiers, pulse generators, logic circuits, and other types of electronic control systems.

The UMD4NTR has several advantages over other transistors when used in pre-biased array applications. Firstly, the UMD4NTR has a high current gain, which allows for more efficient operation. Secondly, its switching speed is faster than most other transistors, making it ideal for use in applications which require fast response. Thirdly, the UMD4NTR’s low leakage current reduces the amount of power consumed by the circuit, resulting in more efficient operation.

The UMD4NTR can be used in a variety of applications, including pulse generator circuits, power amplifiers, power management systems, and digital circuits. The UMD4NTR is particularly well-suited for noise-reduction and high-frequency applications, due to its high-frequency response and noise-suppression capabilities.

In summary, the UMD4NTR is an important type of transistor based on its ability to amplify electronic signals in both digital and analog applications. It is the most commonly used transistor in pre-biased array circuits and is also highly efficient for use in switching and noise reduction applications. Its high current gain, fast switching speed, and low leakage current make the UMD4NTR an ideal choice for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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