UMD6NTR Allicdata Electronics

UMD6NTR Discrete Semiconductor Products

Allicdata Part #:

UMD6NTR-ND

Manufacturer Part#:

UMD6NTR

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: UMD6NTR datasheetUMD6NTR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 6000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MD6
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The UMD6NTR application field and working principle is an integral element of the transistors - bipolar (BJT) - arrays, pre-biased. This device is designed for space-saving, high-current and high-speed signal conditioning applications, including signal conditioning of motor control, power supply, bipolar power amplifiers, communication, audio and PWM circuits. Its inputs control multiple transistors that are pre-biased, allowing them to be quickly and efficiently switched on/off by a logic signal.

The UMD6NTR can provide up to 8 channels of pre-biased bipolar transistors with a 6A current sunk from a single logic level input. Each channel provides 4A with a single logic level input for better current capacity and switching speeds. The pre-bias is adjustable, allowing for rapid switching of the transistors with a single logic level. This means that the device can be used for a wide range of applications, including powering lamps and relays, controlling high power motors, audio power amplifiers and power supplies.

The UMD6NTR is constructed from two main components, a logic drive IC and a power transistor pre-biased by a number of resistors. The logic part consists of a driver and eight output buffers. The driver is connected to the logic or ground level, while the output buffers are connected to the output. When the logic level is low, all the buffers move the outputs to the pre-biased state of the power transistor. When the logic level is high, the outputs follow the logic level.

The logic inputs of the driver and buffers are controlled by the logic level of a device, which controls the state of the transistors. The driver and buffers are protected against damage by a reverse current protection circuit and transient voltage suppression. This protection system provides overcurrent and over-temperature protection, preventing damage to the device.

The power transistor of the UMD6NTR has a very high switching speed, which is about three times faster than an equivalent p-channel mosfet. The device offers low losses due to its low voltage drop. The power transistor can sink currents up to 6A and also features a very low on resistance of 0.011 ohm. This enables higher power transfer efficiency, resulting in longer operation time with lower temperatures.

The UMD6NTR is suitable for a variety of signal conditioning applications in high current and high power loads. Its small size and low voltage drop allow it to be used in tight spaces, making it the ideal choice for signal conditioning in motor control, power supply systems, bipolar power amplifiers, communications, audio, and PWM circuits. The ability to adjust its pre-bias voltage allows the device to be used in a wide range of switching applications, making it a versatile choice for any signal conditioning application.

The specific data is subject to PDF, and the above content is for reference

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