Allicdata Part #: | UMF24NTR-ND |
Manufacturer Part#: |
UMF24NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN PREBIAS/NPN 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | UMF24NTR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max): | 100mA, 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMT6 |
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The UMF24NTR is a high-performance, high-bypass, high-gain pre-biased array Bipolar Junction Transistor (BJT). It is designed to deliver superior performance in a variety of applications, ranging from high-speed switching to analog rate control. The UMF24NTR has a low voltage on-state resistance, high current density, and excellent thermal stability.
The UMF24NTR can be used in a variety of ways. It is used as an amplifier to drive higher voltages or to increase current capacity. It is also used in a power amplifier configuration to deliver large amounts of output power. As a pre-biased BJT, the UMF24NTR can be used in high gain applications, such as linearly controlled amplifiers or differential amplifiers. It can also be used in a feedback topology to provide high accuracy in control systems.
The UMF24NTR has a very simple working principle. Its collector, base and emitter pins form a PN junction. When a small current is applied to the base, electrons flow from the emitter to the collector, creating a current gain. This increased current is then available at the collector output. The voltage between the collector and emitter is determined by the gain of the device, which is determined by the operating temperature. The device can be biased either in an active or cut-off region, so it can be used for both analog and digital control.
The UMF24NTR is a highly-sophisticated pre-biased array BJT and is able to deliver superior performance in a variety of applications. Its low on-state resistance, high current density and excellent thermal stability makes it well-suited for transimpedance and current mirror circuits. It also has a very simple working principle, so it is easy to use and understand. With its capability to operate in both analog and digital modes, as well as its capability to deliver high gain, the UMF24NTR is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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