UMF5NTR Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V / 270 @ 10mA, 2V
Base Part Number:	*MF5
Supplier Device Package:	UMT6
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz, 260MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V, 12V
Current - Collector (Ic) (Max):	100mA, 500mA
Transistor Type:	1 NPN Pre-Biased, 1 PNP
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

UMF5NTR is a type of pre-biased array of bipolar junction transistors. The term ‘pre-biased’ refers to a design where a bias voltage is applied across the transistors, providing better control over their operation. This article will discuss the application field and working principle of UMF5NTR.

Application Field

UMF5NTR arrays are mainly used in digital circuits, logic circuits and especially in power management, RF interfaces and motor driver applications. This type of array is useful in applications where a low-voltage power supply is not available or an auxiliary power source is required.In digital circuits, the array is primarily used to produce high power logic level signals. They are also used to interface directly with a microprocessor, making them a great tool for simpler logic level circuitry.In power management applications, the array is used to provide constant current or voltage levels from a single source. This is great for applications where the power requirements are not predictable, such as with motor drivers, where the current requirements may vary significantly.In RF interfaces, the array is used to switch between high-speed signals. This is great for applications that require low-power switching, such as RF antenna systems.

Working Principle

The principles of operation of UMF5NTR arrays involve biasing the transistor in order to control its operation and the transfer of electrons. Each transistor is biased by applying a certain voltage and current to its control terminal, allowing the electrons to flow freely into the base of the transistor. The bias voltage applied to the control terminal will control the current flowing through the transistor, which can then be regulated by varying the current. This allows for the power transfer requirements of different applications to be met. The transistor\'s operation is also affected by its environment. The array operates best when the surrounding temperature and humidity is at an optimal level. The array may also be disrupted by high frequency signals coming from nearby components, so care must be taken to isolate the array as much as possible.

Conclusion

In conclusion, the UMF5NTR array is a useful tool in pre-biased Bipolar Junction Transistor (BJT) applications. It is mainly used in digital circuits, logic circuits, and power management, RF interfaces and motor driver applications. The array operates by biased the transistor in order to control its operation and the transfer of electrons. The array needs to be protected from high frequency signals and disruption due to the surrounding environment.

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