UMG8NTR Discrete Semiconductor Products |
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Allicdata Part #: | UMG8NTR-ND |
Manufacturer Part#: |
UMG8NTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W UMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UMG8NTR Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | *MG8 |
Supplier Device Package: | UMT5 |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UMG8NTR is a modern transistoral arrangement that serves multiple functions. It utilizes a phenomenon called stochastic tunneling to create a pre-biased gate array that is efficient, reliable, and relatively inexpensive to produce. This device is used extensively in the fields of computer engineering and multiple other aspects of the electronics industry.
The term transistor refers to a semiconductor device that can either switch an electrical current on or off, selectively amplify or attenuate an electrical signal, or serve as an oscillator. The UMG8NTR, also known as an Ultra-Miniature Gate Array is a digital array that contains diodes, resistors, and transistors integrated together. As the name implies, it has an ultra-miniature size that is less than 1/10th the size of a conventional gate array.
The primary application of the UMG8NTR is to provide logic gates with pre-biased input transistors. This means that the transistors are already biased in the correct direction to close the gate and provide the desired logic state. This allows for greater efficiency as the need for additional components to provide bias is eliminated. Furthermore, the potential to cause errors due to incorrect integration of components is also eliminated.
The working principles of the UMG8NTR are based on two main phenomena – tunneling and ionization. The structure of the UMG8NTR is such that two terminals exist at either side of a thin semiconductor layer. The electrons in the semiconductor layer can tunnel into the terminals at either side, resulting in a small amount of current that is much lower than the amount of current that would be induced through traditional conductors. This phenomenon is known as stochastic tunneling.
Ionization is the phenomenon that allows for the transistors to be biased in the correct direction for logic states. This is achieved due to the arrangement of the diodes and transistors in the UMG8NTR. The diodes allow for the electrons to flow from their usual source to the desired destination. When the desired transistor reaches a particular voltage level, it switches on and the gate closes. The gate stays closed until sufficient current is provided from the source.
In conclusion, the UMG8NTR gate array is a modern device that uses a combination of stochastic tunneling and ionization to provide logic gates with pre-biased input transistors. This device is used extensively in the fields of computer engineering and multiple other aspects of the electronics industry because it is efficient, reliable, and inexpensive to produce.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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