UMG9NTR Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Base Part Number:	*MG9
Supplier Device Package:	UMT5
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The UMG9NTR is an array of bipolar junction transistors (BJT) that is pre-biased for specific applications. It is a family of vertical and lateral power BJTs used for linear and switching applications. The device includes an array of N-type and P-type BJTs that are connected in parallel and are bonded to their respective substrate material. UMG9NTR has a wide range of applications and can be used in many different types of applications.

Features

The UMG9NTR is a pre-biased array of power BJTs designed for linear and switching power applications. It is designed to provide a reliable, highly efficient, and low-power solution for power applications. It is designed to be compatible with most systems and can operate at frequency ranges of up to 30 MHz. It is available in three package sizes (12, 15 and 18 pin) and is designed to optimize performance. The UMG9NTR also has a software-controlled self-test feature that helps ensure proper operation of the device, and it also comes with a built-in temperature compensation and anode monitoring mode.

Applications

The UMG9NTR is a versatile device and can be used in a wide range of applications, including switching power supplies, low-voltage regulators, power-amplifiers, audio amplifiers, input-stages, motor-control, motor-switching, etc. The device can also be used for power and current sensing, voltage control, power-filtering, signal-amplification, motor-driving, and noise suppression.

Working Principle

The UMG9NTR is a pre-biased array of BJTs, meaning that each individual transistor has already been biased to create a specific output signal. This means that the device can act as a switch or an amplifier, depending on the specific application. The transistors are connected in a variety of configurations and each transistor is designed to produce different output signals. The transistors use the base-emitter junction to control collector current, and the collector-emitter junction to control output current. The transistors are also connected to appropriate bias systems to control the base-emitter voltage and the collector-emitter voltage.The device is designed to be compatible with most transistors, including PNPs and NPNs. It is designed to be robust and reliable, and can function at high temperatures and high-voltage applications. The UMG9NTR also has an integrated temperature compensation system and an anode monitoring mode, and it can be used in both linear and non-linear applications.

Conclusion

The UMG9NTR is a pre-biased array of power BJTs designed for linear and switching power applications. It is designed to provide a reliable, highly efficient, and low-power solution for power applications. It is available in three package sizes (12, 15 and 18 pins) and is designed to optimize performance. The device can be used in a wide range of applications, including switching power supplies, low-voltage regulators, power amplifiers, audio amplifiers, input-stages, motor-control, motor-switching, etc. The UMG9NTR also has a software-controlled self-test feature that helps ensure proper operation of the device, and it also comes with a built-in temperature compensation and anode monitoring mode. This device is an excellent choice for applications requiring a reliable and efficient power BJT.

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