UMH3NTN Allicdata Electronics

UMH3NTN Discrete Semiconductor Products

Allicdata Part #:

UMH3NTNTR-ND

Manufacturer Part#:

UMH3NTN

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMH3NTN datasheetUMH3NTN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05715
6000 +: $ 0.05398
15000 +: $ 0.04922
30000 +: $ 0.04604
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6
Base Part Number: *MH3
Description

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As one of the most popular types of semiconductor devices, Transistors - Bipolar (BJT) - Arrays, Pre-Biased are known for their versatility, allowing them to be utilized in a broad range of applications. The UMH3NTN, a common pre-biased transistor array, is no exception. This article will provide a comprehensive overview of the UMH3NTN and its usage in different applications, as well as a detailed look at its working principle.

The UMH3NTN is a three-terminal amplifier transistor array designed specifically for use in linear and switching amplifiers, as well as audio and video applications. It is a single-stage integrated circuit consisting of eight N-channel silicon junction transistors in a 9-pin package, with each transistor having separate collector, base, and emitter connections. Its maximum current rating is 1 A and its maximum power dissipation is 1.5 W. The UMH3NTN has a wide band-gap, meaning it is able to withstand a wide range of temperatures, making it suitable for high-temperature applications.

The UMH3NTN\'s unique pre-biased feature is its defining characteristic, allowing the array to be used in applications which require the driving of other transistors or other types of loads. This is done by connecting the base terminal of one transistor to the emitter terminal of another. Since the two transistors are pre-biased, this allows for an easier switching between two states compared to standard arrays, thus providing for a more reliable and efficient system. As a result, the UMH3NTN is often used in switching regulators, audio amplifiers, and video circuits.

The working principle behind the UMH3NTN is commonly referred to as the h-parameter model. This model is based on the concept of four h-parameters, which are used to describe the behavior of a transistor\'s electrical characteristics. These four parameters are the current gain, Cutoff-Frequency and input resistance, which all depend on an external source current source. The UMH3NTN works by transmitting the sensed current between the collector and emitter of each transistor, which in turn affects the output current and voltage. By adjusting the current source and taking the necessary precautions in the design, the UMH3NTN can be used to regulate the current and voltage levels of a circuit.

Overall, the UMH3NTN is an invaluable transistor array for any application which requires pre-biased transistor technology. Its three-terminal design, wide temperature range, and h-Parameter model make it an ideal solution for applications such as audio amplifiers, switching regulators, and video circuits. Moreover, with its simple yet efficient design, the UMH3NTN allows for a reliable and efficient system, making it a valuable addition to any system design.

The specific data is subject to PDF, and the above content is for reference

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