UMH9NTN Discrete Semiconductor Products |
|
Allicdata Part #: | UMH9NTNTR-ND |
Manufacturer Part#: |
UMH9NTN |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UMH9NTN Datasheet/PDF |
Quantity: | 93000 |
3000 +: | $ 0.05715 |
6000 +: | $ 0.05398 |
15000 +: | $ 0.04922 |
30000 +: | $ 0.04604 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | UMT6 |
Base Part Number: | *MH9 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UMH9NTN is an advanced array of pre-biased transistors, designed for power and small-dimension applications. It is widely used in many different fields, like high-power battery (HVBP), telecommunications, storage, automotive and medical.
The UMH9NTN features an advanced gate drive circuit to achieve high-efficiency, high-power performance. The circuit includes a series of voltage-controlled transistors (VCTs) to provide pre-bias control over the array of transistors. The output of the gate drive circuit determines the state of the pre-biased transistors in the array. This circuit also contains additional feedback circuitry to help maintain the desired performance levels.
The UMH9NTN is an extremely reliable and efficient solution for power applications. It boasts an extremely low power consumption and minimal power dissipation, making it ideal for applications requiring significant power in a small form factor. Additionally, the pre-bias control helps to maintain the desired performance and reliability of the array. The UMH9NTN is designed to function in extreme temperature, humidity and vibration conditions, making it suitable for a wide variety of environments.
The working principle of the UMH9NTN is based on the voltage-controlled transistors (VCTs). The VCTs provide the pre-bias control over the transistor array. When the output of the gate drive circuit is applied to the VCTs, they determine the states of the transistors in the array and adjust the pre-bias accordingly. This allows the UMH9NTN to maintain the desired performance levels even under extreme conditions.
The UMH9NTN offers a number of benefits over other pre-biased arrays, including high power efficiency, reliability and flexibility. It can be used for applications that require low power consumption and minimal power dissipation. Additionally, the UMH9NTN is designed to operate in extreme temperature and vibration conditions. Overall, the UMH9NTN is an extremely reliable solution for many power and small-dimension applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UMH9NTN | ROHM Semicon... | 0.06 $ | 93000 | TRANS 2NPN PREBIAS 0.15W ... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...