UMH9NTN Allicdata Electronics

UMH9NTN Discrete Semiconductor Products

Allicdata Part #:

UMH9NTNTR-ND

Manufacturer Part#:

UMH9NTN

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMH9NTN datasheetUMH9NTN Datasheet/PDF
Quantity: 93000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 93000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: *MH9
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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UMH9NTN is an advanced array of pre-biased transistors, designed for power and small-dimension applications. It is widely used in many different fields, like high-power battery (HVBP), telecommunications, storage, automotive and medical.

The UMH9NTN features an advanced gate drive circuit to achieve high-efficiency, high-power performance. The circuit includes a series of voltage-controlled transistors (VCTs) to provide pre-bias control over the array of transistors. The output of the gate drive circuit determines the state of the pre-biased transistors in the array. This circuit also contains additional feedback circuitry to help maintain the desired performance levels.

The UMH9NTN is an extremely reliable and efficient solution for power applications. It boasts an extremely low power consumption and minimal power dissipation, making it ideal for applications requiring significant power in a small form factor. Additionally, the pre-bias control helps to maintain the desired performance and reliability of the array. The UMH9NTN is designed to function in extreme temperature, humidity and vibration conditions, making it suitable for a wide variety of environments.

The working principle of the UMH9NTN is based on the voltage-controlled transistors (VCTs). The VCTs provide the pre-bias control over the transistor array. When the output of the gate drive circuit is applied to the VCTs, they determine the states of the transistors in the array and adjust the pre-bias accordingly. This allows the UMH9NTN to maintain the desired performance levels even under extreme conditions.

The UMH9NTN offers a number of benefits over other pre-biased arrays, including high power efficiency, reliability and flexibility. It can be used for applications that require low power consumption and minimal power dissipation. Additionally, the UMH9NTN is designed to operate in extreme temperature and vibration conditions. Overall, the UMH9NTN is an extremely reliable solution for many power and small-dimension applications.

The specific data is subject to PDF, and the above content is for reference

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