UNRF1A300A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	ML3-N2

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。Introduction: The UNRF1A300A is a single, pre-biased transistor, a type of bipolar junction transistor (BJT). This transistors features high power dissipation, high voltage, and has low on-state resistance, making it suitable for use in high-voltage, high-current applications such as switching, power, and motor control circuits.Application Fields: The UNRF1A300A transistor is ideal for use in a variety of high-power applications. It can be used in switching circuits for motor control, in power circuits for on-off control, and load-switching applications. This transistor can also be used in numerous analog and digital electronics such as amplifiers, oscillators, and converters, as well as low noise applications. Working Principle: The UNRF1A300A uses bipolar technology, meaning that it is composed of two P-type and two N-type regions in a single crystal substrate. This feature makes it possible to operate the transistor with either a positive or negative voltage applied to the base terminal. With a positive voltage, the current flows from the collector to the emitter and the device is turned on. With a negative voltage, the transistor is off and current does not flow from collector to emitter. The UNRF1A300A is capable of withstanding high power dissipation and high voltage, making it suitable for high-current applications such as motor control. It also features low on-state resistance, making it ideal for use in power circuits for on-off control and load switching applications. Conclusion: The UNRF1A300A is a single, pre-biased bipolar junction transistor (BJT) optimized for use in high-power, high-voltage, and low-noise applications. Its low on-state resistance and high voltage make it ideal for switching, power, and motor control circuits. For analog and digital electronics, such as amplifiers, oscillators, and converters, it is an excellent choice.

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