Allicdata Part #: | UNRF2A100ATR-ND |
Manufacturer Part#: |
UNRF2A100A |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 100MW ML3-N2 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNRF2A100A Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07286 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | ML3-N2 |
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UNRF2A100A is a single pre-biased bipolar junction transistor (BJT). It is used to amplify electrical signals, switching, and provide voltage regulation. This common type of transistor is used in a range of electronic applications, from small signal amplification to large power switching.
A BJT is formed by two p-n junctions placed in close proximity next to a silicon substrate. One side is an emitter, the other side is a collector. The middle layer is a base. The base is very thin and is the control element of the BJT. It is highly doped with impurities, meaning there are a lot of free electrons and holes available to move through the structure. A voltage applied to the base is used to control the current flow between the emitter and collector.
UNRF2A100A is a NPN transistor that operates in the range of 0.2 to 20W. It has a maximum voltage rating of 80V and a maximum current rating of 1A. The application field of this transistor is mainly used in switching and amplifier circuits because of its high current and voltage ratings.
The working principle of UNRF2A100A is relatively simple. A voltage applied to the base terminal of the transistor will create a strong electric field between the base and the emitter. This electric field attracts electrons from the emitter and releases holes into the collector. The result is a large flow of current between the two terminals.
In order to stop the flow of current between the collector and the emitter, the voltage applied to the base must be reduced. When the voltage applied to the base is lowered, the electric field will no longer be strong enough to pull electrons through the transistor structure, and the current that passes between the collector and the emitter will cease. This is the basic working principle of a BJT.
UNRF2A100A is a versatile and reliable transistor that can be used in a wide range of applications. Its high current and voltage ratings are ideal for small signal amplifiers, as well as high power switching applications. With its simple working principle, it is an ideal choice for reliable and efficient operation.
The specific data is subject to PDF, and the above content is for reference
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