UNRF1A400A Discrete Semiconductor Products |
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Allicdata Part #: | UNRF1A400ATR-ND |
Manufacturer Part#: |
UNRF1A400A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 100MW ML3-N2 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNRF1A400A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | ML3-N2 |
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A UNRF1A400A is a single pre-biased bipolar junction transistors (BJT). It is used in many different applications, with its primary use being in power management circuits. Its main use is in applications such as motor control, switch-mode power supplies, DC/DC converters, and pulse-width modulation (PWM) control.
The UNRF1A400A is a unipolar npn (negative polarity n-channel) type of transistor. It is constructed from an epitaxial silicon substrate with an oxide film layer on top. The oxide layer provides insulation from the rest of the device, helping to ensure that the current flow is strong and reliable. The UNRF1A400A has an effective current gain (β) of 600, which is much higher than that of an ordinary npn transistor. This makes it well-suited for use in circuits where high gain is needed.
For optimal operation, the UNRF1A400A is typically used in a pre-biased configuration. This is done by applying a bias voltage to the emitter of the device to create a reverse-biased PN junction. This allows current to flow into the device and increases its gain. Because the UNRF1A400A has a high gain, it is able to achieve higher levels of power efficiency than other types of transistors.
The UNRF1A400As main working principle involves the movement of charge carriers within the transistor. When biased, the negative voltage on the emitter creates a reverse-biased PN junction between the base and collector regions of the transistor. This creates a potential barrier across which electrons cannot flow and instead are forced to move through the base, thereby causing a small current to flow into the collector. This current is amplified by the device’s high current gain and is then output from the device as amplified output.
The UNRF1A400A is most often used in a pre-biased configuration to allow for higher levels of power efficiency and output current. When used this way, the device is able to convert a small input signal into a larger output signal, allowing it to be used in different types of circuits to achieve increased efficiency. It is also often used in switching applications, allowing it to turn a signal on and off quickly and efficiently.
The UNRF1A400A is a versatile and reliable transistor, used in a wide variety of applications. It is able to provide reliable and efficient operation in a wide range of circuits, allowing it to be used in many different applications. Its pre-biased configuration allows it to maximize power efficiency, making it ideal for power management applications.
The specific data is subject to PDF, and the above content is for reference
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