UNRL11500A Allicdata Electronics

UNRL11500A Discrete Semiconductor Products

Allicdata Part #:

UNRL11500ATR-ND

Manufacturer Part#:

UNRL11500A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW ML4-N1
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNRL11500A datasheetUNRL11500A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-103
Supplier Device Package: ML4-N1
Description

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The UNRL11500A is a single Pre-Biased transistor, widely used for a variety of applications. It is one of the most popular choices for low-power electronic products and is also used for a variety of high-temperature applications. While the exact specifications of the device vary, its basic structure can be divided into two distinct parts: the substrate and the device itself.

The substrate is usually made from silicon, with differing concentrations of other elements such as germanium and nitrogen added. An epitaxial process is used to ensure that a uniform composition is achieved throughout the device. On top of this the metal contacts, gate and drain regions are added. The gate structure is made from metal such as titanium and is used to quickly change the charge of the transistor.

The UNRL11500A has two distinct working principles – as a switching device and as an amplifier. In its most basic form, when used as a switching device, current is passed through the substrate, changing the voltage of the transistor. When the voltage reaches a certain level, the transistor switches on, allowing current to pass through it. When the voltage drops, the transistor switches off again, preventing further current from passing through.

When used as an amplifier, the UNRL11500A is connected to an input voltage. The voltage is modulated by the transistor on the same frequency and phase of the input voltage. This process creates a current in the output that is proportional to the input current, resulting in amplification. It is this ability to amplify signals that makes the UNRL11500A a popular choice for many applications, such as audio amplifiers, radio receivers and optical transducers.

The UNRL11500A is also very durable and is used in many high-temperature applications. Its ability to tolerate temperatures exceeding 400°C makes it a great choice for applications that require reliable performance at high temperatures. Examples of these applications include power tubes in plasma display panels, heat exchanger tubes for medical equipment, or catalyst tubes for automotive oxygen sensors.

Overall, the UNRL11500A is a versatile single Pre-Biased transistor capable of fulfilling a variety of applications. Its ability to switch quickly, its wide temperature range, and its ability to amplify make it a popular choice for many low-power and high-temperature application.

The specific data is subject to PDF, and the above content is for reference

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