UNRL21300A Allicdata Electronics

UNRL21300A Discrete Semiconductor Products

Allicdata Part #:

UNRL21300ATR-ND

Manufacturer Part#:

UNRL21300A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW ML4-N1
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNRL21300A datasheetUNRL21300A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-103
Supplier Device Package: ML4-N1
Description

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UNRL21300A is a single, pre-biased bipolar (BJT) transistor with high breakdown voltage, low on-state resistance, and fast switching speed. It is an ideal choice for applications where low leakage and fast switching are required. The UNRL21300A is available in both through-hole and surface mount packages.

Application Field

The UNRL21300A is well suited for use in a broad range of applications, including high-side switch, low-side switch, ground fault protection, and flyback diodes. It is particularly useful in motor drive control, where its high breakdown voltage, low on-state resistance, and fast switching speed provide a cost-effective solution. The UNRL21300A is also ideal for use in UPS/AVR applications, as it provides reliable protection for critical systems.

Working Principle

The UNRL21300A is a bipolar (BJT) transistor, which consists of two layers of semiconductor material that are sandwiched together. In the base region, one layer is positive and the other is negative. When the base region is forward biased by a current, it allows carriers (electrons and holes) to flow between the collector and emitter regions. This in turn creates a channel of conduction, which can be used to control the flow of current.

The UNRL21300A is a single, pre-biased transistor, which means that it starts operating when its emitter is connected to a voltage supply, without the need for a separate base connection. This allows the transistor to switch faster than other types of transistors, which need to be externally biased before they can be used.

The UNRL21300A is designed with a low on-state resistance, which allows it to switch from off to on more quickly than other transistors. Furthermore, it has a high breakdown voltage, meaning that it can handle large surges in voltage without being damaged.

Overall, the UNRL21300A is an ideal choice for applications where fast switching, low leakage, and high breakdown voltage are required. It is available in both through-hole and surface mount packages and can handle a wide range of voltages and current levels.

The specific data is subject to PDF, and the above content is for reference

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