UNRL21100A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	150MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-103
Supplier Device Package:	ML4-N1

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UNRL21100A Application Field and Working PrincipleThe UNRL21100A is a single, pre-biased, bipolar junction transistor (BJT) designed to meet the requirements of a variety of applications such as analogue signal processing and amplifier designs. This device is capable of functioning in a wide range of operating conditions and is especially well-suited for power management applications.The UNRL21100A is an NPN device and is formed from two complementary sides. The transistor consists of a Base region, known as the Emitter, which is connected to the Collector region. A bias voltage is applied to the Emitter, and when a current flows through the base-collector junction of the transistor, a much larger current will flow from the Collector to the Emitter terminal. This transistor is constructed from semiconductor material and has a wide range of performance characteristics.The UNRL21100A is designed to operate with a wide range of currents and voltages. It is capable of operating in the reverse breakdown region with a current gain of up to 200 times. This transistor can also be used in the well-known and popular “common emitter” configuration. In this configuration, the Emitter is connected to a voltage source, and the collector is connected to a load having a much higher impedance than that of the emitter. The input current applied to the Emitter is then amplified by the transistor, with the output current being taken from the Collector.The UNRL21100A has wide application in power management, as well as in amplifiers and other analogue circuits. Its current gain and wide voltage range make it ideal for a wide range of applications. It is also capable of functioning in high temperatures up to 175°C, making it suitable for use in demanding environments.In conclusion, the UNRL21100A is a single, pre-biased bipolar junction transistor designed to meet the requirements of a variety of applications. It is capable of functioning in a wide range of operating conditions and is especially well-suited for power management applications. Its current gain and wide voltage range make it ideal for a wide range of applications.

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