Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF Amplifiers

The UPG2250T5N-E2-A is a type of RF amplifier that is based on the basic framework of Gallium Nitride (GaNs.) It is a specialized and very efficient RF amplifier that offers many excellent features that provide excellent advantage over traditional amplifiers.

Application Field

The UPG2250T5N-E2-A RF amplifier is typically used in variety of applications. Some of these applications include TV broadcasting, low-noise amplifiers, conditioning signals for transmitting and receiving, mobile satellite, and others similar applications. The amplifier provides a great deal support for efficient signal transmission in various conditions as it is capable of providing a high gain bandwidth with very low distortion and low-frequency noise. Moreover, depending on the requirement, the gain can be adjusted by adjusting the bias voltage.

Working Principle

The working principle of UPG2250T5N-E2-A RF amplifier is based primarily on the gallium nitride technology. The internal architecture of the amplifier consists of GaN devices that offer higher efficiency than traditional silicon-based transistors. These GaNs are connected to a transistor substrate and a heatsink is used to dissipate the generated heat. The amplifier generates very little harmonics and operates at a wide range of operating frequency band.

The GaN devices employed in the amplifier have significantly low saturation voltage and are designed to provide excellent efficiency and extended linearity. The amplifiers features a built-in temperature sensor which helps to monitor the temperature of the transistor substrate and adjust the current output to prevent the device from overheating. Furthermore, the amplifier also features a reverse protection circuits and a low voltage shutdown feature for additional safety. Other additional features such as Fault/Over-Temperature/Current shutdown and External Enable/Disable Connectors are also available.

Conclusion

The UPG2250T5N-E2-A RF amplifier is an advanced RF amplifier that offers several advantages over traditional amplifiers. It is a gallium nitride based device that offers higher efficiency, extended linearity, and adjustable gain bandwidth. The amplifier is designed to serve a wide range of applications such as TV broadcasting, low-noise amplifiers, and conditioning signals for transmitting and receiving. Finally, the amplifier also includes several features such as temperature monitoring, reverse protection circuits, and a low voltage shutdown for additional safety.

The specific data is subject to PDF, and the above content is for reference