Allicdata Part #: | UPP1002E3/TR7-ND |
Manufacturer Part#: |
UPP1002E3/TR7 |
Price: | $ 1.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE PIN 100V 2.5W POWERMITE |
More Detail: | RF Diode PIN - Single 100V 2.5W DO-216 |
DataSheet: | UPP1002E3/TR7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.03194 |
Series: | POWERMITE® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Capacitance @ Vr, F: | 1.6pF @ 100V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Package / Case: | DO-216AA |
Supplier Device Package: | DO-216 |
Base Part Number: | UPP1002 |
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The UPP1002E3/TR7 is a high-performance PIN diode RF switch. It can be used in a variety of applications that require efficient energy switching, such as modem switching and RF attenuators. The device uses different types of PIN diode structures to provide power switching and an integrated approach to the control logic circuitry that simplifies the control algorithm.
The UPP1002E3/TR7 has a low-impedance input/output impedance, making it ideal for controlling high power signals. It also has low insertion loss and high isolation, making it suitable for use in a wide range of applications. Furthermore, the device has a wide operating temperature range, making it suitable for use in a variety of environments.
A PIN diode is a semiconductor device in which an intrinsic semiconductor layer is sandwiched between two layers of n-type material. The PIN diode has a relatively low forward voltage drop and is capable of operating at high current levels. It also has a high switching speed and low resistance. The PIN diode is commonly used in RF applications, where the desired level of signal attenuation is achieved through the application of a reverse bias voltage across the diode.
The PIN diode is connected to a control circuit via a switching signal, which can be a voltage or a current signal. When the signal is applied, the reverse bias voltage of the diode is increased, which increases its resistance. The resulting effect is that the amount of signal attenuation in the device increases. The switching signal can also be used to control the current flow through the diode. This reduces the amount of power that is dissipated and increases the speed of the switching process.
The UPP1002E3/TR7 switch can be used to control signal levels in a variety of applications. It can be used in telecommunications systems and modems to control the power of the signals being sent, or in RF systems to control the level of isolation between transmitter and receiver. It can also be used as an attenuator, to reduce the level of a signal. The device is also suitable for use in high-power applications, where its high-current capability enables efficient switching of high-power levels.
The UPP1002E3/TR7 is a versatile and highly efficient switch for RF applications and is suitable for a wide range of applications. Its low forward voltage drop, high switching speed and low resistance make it suitable for use in a variety of applications. Furthermore, its wide temperature range makes it suitable for use in a variety of environments. This makes the UPP1002E3/TR7 an ideal choice for applications that require efficient energy switching, such as modem switching and RF attenuators.
The specific data is subject to PDF, and the above content is for reference
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