US1D-E3/5AT Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	10µA @ 200V
Capacitance @ Vr, F:	15pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC (SMA)
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	US1D

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Introduction

Diodes are the most basic and versatile of all discrete semiconductor devices. They are used in thousands of different circuit designs and can have a wide range of applications. The US1D-E3/5AT is a single rectifier diode, commonly used in high-frequency, high-speed applications. It is a small glass encapsulated, ultrafast switching diode with a moderate forward voltage rating and a low reverse voltage rating. In this article, we’ll examine the application field and working principle of the US1D-E3/5AT.

Application Field

Due to its small size and low power consumption, the US1D-E3/5AT is a popular choice for limited space applications. It can be found in a wide range of high-speed switching and power control circuits, from computer hardware and telecommunications equipment to audio and video systems. This diode has a wide range of application fields due to its low forward voltage and high switching speed, which enable it to be used for efficient high frequency switching of DC voltages.In addition, the US1D-E3/5AT is also used in laser systems and pulsed power applications. It can be used as a switch to rapidly charge or discharge large capacitors, which is essential in laser systems. The US1D-E3/5AT also has a low maximum reverse voltage which makes it suitable for use in RF circuits, where there is a need to limit the current flow in one direction. This enables it to be used in high-frequency communications systems and microwave circuit designs.

Working Principle

The US1D-E3/5AT is a single junction rectifier diode, consisting of two p-n junctions connected back-to-back. When a voltage is applied to the anode and cathode, it creates an electric field between them. This electric field presents the diode with a resistance to the current. When the anode is at a higher potential than the cathode, the diode will allow a current flow. This is referred to as the ‘forward biasing’of the diode.On the other hand, when the cathode is at a higher potential than the anode, the diode’s current flow is inhibited. This is referred to as the ‘reverse biasing’of the diode. The US1D-E3/5AT has a low maximum reverse voltage rating, meaning that it can only withstand a small amount of reverse voltage before the current flow is inhibited.When operated in the forward biasing mode, the diode acts as a low resistance path for current flow and presents low voltage drop across the diode. This allows for efficient switching and power conversion in circuits. The US1D-E3/5AT also has a very fast recovery time, which is an important factor for circuits that involve switching current on and off rapidly.

Summary

The US1D-E3/5AT is a single rectifier diode, commonly used in high-frequency, high-speed applications. This diode can be found in a wide range of applications, including computer hardware and telecommunications equipment, audio and video systems, RF circuits, microwave circuit designs, laser systems and pulsed power applications.It is a small glass encapsulated, ultrafast switching diode with low forward voltage and a low reverse voltage rating. When a voltage is applied between the anode and cathode, a forward biasing mode allows a current to pass through the diode, while inreverse biasing the current flow is inhibited. The US1D-E3/5AT has a low maximum reverse voltage rating and a very fast recovery time, making it suitable for high speed switching and power conversion.

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