Allicdata Part #: | US1DHM2G-ND |
Manufacturer Part#: |
US1DHM2G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1DHM2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04181 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes have become essential components in modern electronics including rectifiers, voltage regulators and voltage switches. One such diode, the US1DHM2G, is a single rectifier that is widely used in different applications, with a number of unique characteristics. This article will describe in detail the applications of the US1DHM2G diode and its working principle.
The US1DHM2G is a single rectifier diode which is most commonly used for controlling the flow of current in an electronic circuit. This diode operates over a wide range of temperatures, from -40°C to +105°C, and handles very high peak blocked voltages and current levels. It is also very efficient in rectifying the alternating current (AC) to direct current (DC). This rectifier diode can be used in a variety of applications such as high-voltage and high-current rectifiers, high efficiency switching, low-dropout voltage regulators, as well as for overvoltage protection. The diode also features a low power dissipation, which makes it ideal for use in battery operated applications.
The working principle of the US1DHM2G rectifier diode is based on the principle of PN-junction. The PN-junction is formed when two semiconductor materials, one with a negative charge and one with a positive charge are joined together. This junction allows current to flow in only one direction. When a forward biased voltage is applied across the diode, it is allowed to conduct current in the forward direction, while the reverse current is blocked. When the reverse voltage across the diode is increased, the maximum current is limited and the diode breaks down.
The US1DHM2G has many advantages over other types of diodes. It has a high peak blocking voltage of +1200V, a high forward current rating of 2A, and a low reverse leakage current of 1uA. It also has a maximum power dissipation of 100mW and a low forward voltage drop of 0.95V. The diode is also available in a variety of package types, such as surface mount and through-hole. This makes it a very versatile and cost effective device for a wide range of applications.
In conclusion, the US1DHM2G is a versatile single rectifier diode that has a wide variety of applications, particularly in high-voltage, high-current rectifiers, voltage regulators, and overvoltage protection. It has a wide operating range, a high peak blocking voltage, a high forward current rating, and a low forward voltage drop. The diode is also available in a variety of package types, making it a cost effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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