Allicdata Part #: | US6J11TR-ND |
Manufacturer Part#: |
US6J11TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 1.3A TUMT6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Sur... |
DataSheet: | US6J11TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Base Part Number: | *J11 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 320mW |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 1.3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The US6J11TR is a Field Effect Transistor (FET) array designed specifically to help designers effectively address the issues associated with providing protection circuits in end products. FETs are extremely versatile devices and in many applications, are a preferred choice to bipolar transistors due to their superior switching capabilities, immunity to latch-up, and robustness for ESD events. As circuits become more complex, however, this flexibility changes and the use of FETs as a means of providing protection circuits starts to become an issue. The US6J11TR helps address these issues due to its ability to provide multiple discrete FETs in a single package.
The US6J11TR is a monolithic FET array featuring eight independent FETs and four complimentary drivers. The FETs are all configured similarly, featuring an N-Channel FET in series with a reverse-diode enhanced P-Channel FET. This combination of FETs allows for low-resistance conducting paths and low switching voltage when powering end devices.
The US6J11TR also comes with a variety of features that make it an ideal choice for applications requiring protection circuits. In addition to its low on-resistance and high resistance to ESD events, the US6J11TR also features adjustable-voltage clamping, making it perfect for designs needing a wide range of operating voltages. Furthermore, the US6J11TR is designed with a lockable latch-up feature, allowing designers to set the operating range at which protection circuits are activated.
One of the most important benefits of the US6J11TR is its ability to provide multiple FETs in a single package. This helps reduce board space and cost when compared to discrete FETs, while also offering the designer a more cost-effective solution. Furthermore, adding FETs in array form allows for higher ESD protection and operation at higher frequencies, enabling designers to easily letu0026a;#039;s take for their application.
In conclusion, the US6J11TR provides designers with a cost-effective, space saving, and reliable solution for providing protection circuits in end devices. With its low resistance and adjustable-voltages, the US6J11TR offers designers a variety of features and benefits that can help them build complex and robust protection schemes quickly and more efficiently.
The specific data is subject to PDF, and the above content is for reference
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