Allicdata Part #: | US6K2TR-ND |
Manufacturer Part#: |
US6K2TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2N-CH 30V 1.4A TUMT6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 1.4A 1W Surfac... |
DataSheet: | US6K2TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *K2 |
Supplier Device Package: | TUMT6 |
Package / Case: | 6-SMD, Flat Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 1W |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The US6K2TR is an array of three FETs (Field Effect Transistors) and is commonly used in various applications that require high switching speeds, high breakdown voltages, and low gate currents. The array is composed of three N-type MOSFETs, each with its own gate terminal, drain terminal, and source terminal. The three FETs are arranged in a series, with each individual FET having a voltage rating of 6KV, a current rating of 1A, and a total gate drain capacitance of 10pF. By connecting the source terminals together, these FETs can form an array with a common source.
The US6K2TR is usually used in applications such as high-frequency amplifiers, radio frequency applications, and power regulation systems. Its fast switching speed makes it ideal for these applications, while its low gate current and high voltage rating gives it excellent reliability. One key feature of the US6K2TR is its low capacitance, which helps reduce losses associated with RF applications. As a result, it is often used in high-end audio amplifiers and other audio equipment.
Working Principle
The basic working principle of the US6K2TR involves the usage of electrostatic gate control. Essentially, when a voltage is applied to the gate terminal, the gate-source conductance of the MOSFETs increase, and the drain current is thus allowed to flow. As the drain current flows, the voltage across the drain-source terminal generates a voltage drop, which can be used to control the current flow through the transistor. This process is known as source-follower operation.
The operating voltage for the US6K2TR is 6KV, with a dielectric strength of 6KV(ac) per terminal. It can operate at up to 1A and has a total gate-drain capacitance of 10pF. It also has an on-state resistance of 2.2Ohm.
The US6K2TR is an excellent choice for applications that require high-speed switching and low levels of distortion. Its high voltage and current ratings make it ideal for applications such as radio frequency amplifiers, audio amplifiers, and power regulation systems. Its low capacitance also helps reduce signal loss and distortion in RF applications, making it an ideal choice for audio equipment. Its high voltage rating and low gate current ensure excellent reliability even under heavy stress. The US6K2TR is one of the most popular FET arrays used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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