Allicdata Part #: | USB260HM3/52TGITR-ND |
Manufacturer Part#: |
USB260HM3/52T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 2A DO214AA |
More Detail: | Diode Standard 600V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | USB260HM3/52T Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The USB260HM3/52T is a type of single diode rectifier that is used in a variety of applications. It is specifically optimized for use in high-performance high-speed switching diode designs and is an excellent choice for high power applications. The USB260HM3/52T is an ideal solution for a variety of high-speed diode applications, including power mosfets, motor controls, consumer electronics, automotive and military applications.
The USB260HM3/52T is a solid state power device that uses a continuous reverse current and special high-performance glass-passivated junction technology for low leakage current. It is designed to have a very low forward voltage drop and has a maximum forward surge current rating of 52 amperes and a maximum average forward current rating of 30 amperes. It also has a reverse voltage and current rating of 200 volts and 5 milliamps, respectively. The device is capable of operating at temperature extremes between -55 and 175 degrees Celsius, making it a suitable component for many environments.
The USB260HM3/52T utilizes a special high-speed, high-quality Glass-Passivated Diode (GPD) for high performance switching. It features a densely packed structure, reducing inductance to minimize power losses and reduce thermal stress. It also features a wide reverse-recovery time, making it suitable for high-speed switching applications. The GPD also gives the component a much higher power densification rate compared to other available products.
The USB260HM3/52T also has an excellent frequency response, enabling it to be used for applications that require a wide frequency range. It is also capable of withstanding significant power spikes and transients, making it suitable for use in areas where large, sudden currents can occur. This component also has a very low level of ESD susceptibility, making it suitable for use in areas subject to high levels of electrostatic discharge.
The USB260HM3/52T is an excellent choice for a wide variety of applications where a high-speed, low-power, low-cost solution is needed. It is specifically designed for use in high-frequency switching designs, along with providing significantly better performance than other available products. The device is also suitable for use in areas subject to high levels of electrostatic discharge and is capable of withstanding significant power spikes and transients. It is also capable of operating in extreme temperatures, making it capable of withstanding demanding power requirements.
The specific data is subject to PDF, and the above content is for reference
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