USB50412CE3/TR7 Allicdata Electronics

USB50412CE3/TR7 Circuit Protection

Allicdata Part #:

USB50412CE3/TR7-ND

Manufacturer Part#:

USB50412CE3/TR7

Price: $ 0.49
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 12V 26V SOT143
More Detail: N/A
DataSheet: USB50412CE3/TR7 datasheetUSB50412CE3/TR7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.44651
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Base Part Number: USB50412
Supplier Device Package: SOT-143
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: Ethernet
Power Line Protection: No
Power - Peak Pulse: 500W
Series: --
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient Voltage Suppressors (TVS) are devices designed to protect sensitive circuitry from voltage spikes. The USB50412CE3/TR7 is one such device, which offers overvoltage protection for ESD and lightning induced transients. It is an integrated product with dual channel protection, which makes it suitable for protecting sensitive digital I/O lines in all types of systems that require overvoltage protection.

The USB50412CE3/TR7 is a bilateral silicon diode array that is designed to protect one I/O line from overvoltage transients. It is designed for use in applications that require high performance, low capacitance and low capacitive leakage, including digital I/O lines in computers, communications equipment and consumer electronics. The device is capable of handling up to 14.5 It of surge current and up to 15.0 V of ESD protection for incoming power rail voltage swings of up to 10 V.

The USB50412CE3/TR7 works on the principle of a voltage clamp, where the voltage of the incoming transient is clamped at the value of the VBR (breakdown voltage) of the TVS diode. This voltage is usually one and a half times the normal operating voltage of the system. When a transient voltage exceeds the VBR of the TVS diode, the current begins to flow in the TVS diode and the voltage is clamped at the VBR. This current then gradually decreases as the energy in the transient voltage decays and eventually returns to its original value or near-zero value. If the incoming voltage stays below the VBR, then the TVS diode does not conduct current.

The USB50412CE3/TR7 is a low-capacitance TVS diode array, providing protection for digital I/O lines. It has a low capacitance of 0.11 pF, making it suitable for use in high-speed data lines. It has a high peak pulse power rating of 6 kV, providing excellent overvoltage protection in ESD and lightning induced transient events. The device also has a low response time of less than 5 ns, making it suitable for high speed data lines that require fast response times for overvoltage protection.

The USB50412CE3/TR7 is ideal for use in a wide variety of applications that require overvoltage protection. These applications include digital I/O lines in computers, communications equipment and consumer electronics. It is also suitable for protecting sensitive semiconductor devices such as DDR memory, ASICs and microcontroller I/O lines. The device has high surge current handling capabilities, making it ideal for use in applications that require maximum overvoltage protection.

The USB50412CE3/TR7 is an integrated device that provides excellent protection for sensitive digital I/O lines from overvoltage transients. It is designed to provide high performance, low capacitance and low capacitive leakage in order to provide reliable overvoltage protection. The device is suitable for use in applications that require high speed data lines and high surge current handling capabilities. The device is also ideal for protecting sensitive semiconductor devices from overvoltage transients.

The specific data is subject to PDF, and the above content is for reference

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