UT6JA2TCR Discrete Semiconductor Products |
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Allicdata Part #: | UT6JA2TCRTR-ND |
Manufacturer Part#: |
UT6JA2TCR |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | -30V PCH+PCH MIDDLE POWER MOSFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 4A 2W Surface ... |
DataSheet: | UT6JA2TCR Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.19056 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 305pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-PowerUDFN |
Supplier Device Package: | HUML2020L8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UT6JA2TCR field effect transistor (FET) is a type of transistor that uses electric field to control and adjust the current flow. It is a popular component used in many electronic and communication applications, including radio frequency amplifiers, filter circuits, and other power switching circuits. It has a high capacity to handle high voltage and current, and is easily integrated into a variety of circuit designs. Additionally, the UT6JA2TCR has the ability to perform low-loss control and modulation of signals, which makes it an ideal component for use in precision applications.
The UT6JA2TCR is an N-channel FET, which is a type of FET that is designed to pass current in one direction only. It has two source terminals, two gate terminals, and one drain terminal. When the gate voltage is increased, it attracts electrons to form a channel of current between the source and the drain. This process is called inversion. The amount of current passing through the channel is regulated by the voltage level of the gate terminal, which determines the “width” of the channel and thus the current that passes through it.
The UT6JA2TCR is typically used in applications such as power switching circuits, RF amplifiers, filter circuits, and others. The FET can act as a switch, allowing current to pass between source and drain, or as an amplifier, increasing the amplitude of the input signal. Its high current and voltage handling capacities make it suitable for a wide range of applications. Additionally, the FET can be used as a voltage regulator, allowing the level of output voltage to be adjusted. This is especially useful in applications in which the output voltage needs to be precisely controlled.
The UT6JA2TCR FET can also be used in arrays, where multiple devices are incorporated into a single package. These arrays can be connected together to form a powerful and reliable switch or amplifier. Furthermore, multiple arrays can be connected in series or parallel to achieve higher power ratings. Arrays are especially suitable for applications in which a large number of FETs are required, as they provide a compact and cost-effective solution.
In summary, the UT6JA2TCR field effect transistor is a highly capable component, suitable for use in a wide array of applications. Its ability to perform low-loss control and modulation makes it an ideal choice for precision applications. Additionally, it can be used as a switch, an amplifier, or a voltage regulator, and its robust design provides high current and voltage handling capacities. Furthermore, it can be easily integrated into multi-component arrays, providing a compact and cost-effective solution for larger projects.
The specific data is subject to PDF, and the above content is for reference
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