UT6K3TCR Discrete Semiconductor Products |
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Allicdata Part #: | UT6K3TCRTR-ND |
Manufacturer Part#: |
UT6K3TCR |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 30V NCH+NCH MIDDLE POWER MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5.5A 2W Surfac... |
DataSheet: | UT6K3TCR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.17670 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-PowerUDFN |
Supplier Device Package: | HUML2020L8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UT6K3TCR is an integrated transistors array containing N-Mosfet driver transistors. It is designed to drive a power MOSFET in any applications requiring a high-current device or a high speed switching.
This MOSFET array is available in three packages: a small 8-pin PowerSOIC package with an exposed pad for increased Robustness and thermal management, an 8-pin PowerDIP package and a small 8-pin DIP package, allowing for the smallest footprint. The device is shipped in shortform, meaning that the device is supplied in the same configuration as it was when it left the factory, allowing for rapid assembly and test. It has a maximum supply voltage of 6V, with a supply current of 700mA
The UT6K3TCR contains N-Mosfet driver transistors, which are highly efficient devices for power applications. The device has a maximum output voltage of 6V, with a maximum output current of 6A. It is designed to drive a power MOSFET, allowing for low on-resistance and high speed switching. The device contains two gate drive transistors, which are P-channel and N-channel, which can be used in a high-current device and/or fast switching application.
The working principles of the UT6K3TCR are simple and can be explained in two stages. Firstly, when the supply voltage is applied, the voltage difference between the gate and the source of the MOSFET is created. This voltage difference is then converted by the N-Mosfet driver transistors. The transistors then amplify this voltage difference and drive the MOSFET into conduction.
The second stage of operation involves the control of the gate drive transistors. The gate drive transistors are controlled by the voltage and current across the N-Mosfet driver transistors. The voltage and current have to be carefully managed, as they will affect the amount of current that flows through the power MOSFET. The N-Mosfet driver transistors will regulate the amount of current flowing through the MOSFET, ensuring that the device is operated in a safe and stable manner.
UT6K3TCR is an excellent choice for any applications requiring a high-current device or a high speed switching. It is an integrated transistors array containing N-Mosfet driver transistors, allowing for low on-resistance and high speed switching. It is available in three packages and its working principles are easy to understand and apply. It is the perfect choice for driving a power MOSFET in any application requiring a fast high-current device.
The specific data is subject to PDF, and the above content is for reference
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