V10170C-M3/4W Allicdata Electronics
Allicdata Part #:

V10170C-M3/4WGI-ND

Manufacturer Part#:

V10170C-M3/4W

Price: $ 0.68
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 170V TO220
More Detail: Diode Array 1 Pair Common Cathode Schottky 170V 5A...
DataSheet: V10170C-M3/4W datasheetV10170C-M3/4W Datasheet/PDF
Quantity: 1000
2000 +: $ 0.60958
Stock 1000Can Ship Immediately
$ 0.68
Specifications
Series: TMBS®
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 1.03V @ 5A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 90µA @ 170V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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V10170C-M3/4W Application Field and Working Principle

The V10170C-M3/4W is a dual Schottky rectifier array that is oftentimes used as an alternative to field-effect transistors (FETs). It is a unidirectional device, meaning that it is capable of functioning with a single polarity. This allows it to be used as a replacement for single-diode rectifiers in logic circuits, as well as a replacement for bipolar components in other applications.

In the V10170C-M3/4W, each \'\'half\'\' of the device consists of four internally connected Schottky rectifiers which are connected in tandem. This allows the device to provide switching and/or bidirectional features, depending on the design of the circuit. The device\'s maximum operating temperature is 175 °C and its operating temperature range is -55 °C to 175 °C.

In terms of the V10170C-M3/4W\'s application field, it is most often used in telecommunication, power conversion, and motor control. Its power dissipation is low, which makes it particularly useful for applications where space and power utilization are a major concern. Its versatility also makes it an ideal choice for applications such as protection circuits, voltage regulation, and low-power switching. Beyond this, the device also maintains good diode characteristics, with a low forward voltage drop, high reverse voltage blocking capabilities, and a low on-state resistance, making it suitable for use in a variety of circuits.

Working Principle of the V10170C-M3/4W

The V10170C-M3/4W is based on the Schottky diode principle, where a thin Metall-Oxide (MOS) layer is sandwiched between two metal semiconductors. This is responsible for creating a very low on-state voltage drop, allowing the device to function as a switch within a circuit. This principle also provides the device with its capability to block voltages in the reverse direction, meaning that it can be used for a variety of applications.

In terms of its diode operation, the V10170C-M3/4W is built in such a way that the voltage drop between the two terminals (or between any two adjacent terminals) is very low. This makes it highly suitable for circuit protection applications, as its very low forward voltage drop prevents any excessive currents being drawn out of the circuit. Similarly, its reverse voltage blocking capability prevents any current entering the circuit during a reverse voltage event.

Conclusion

The V10170C-M3/4W is an innovative Schottky diode array that offers a range of features which make it suitable for a wide range of applications. Its low-power consumption, versatile output capabilities, and low-voltage operation make it an ideal choice for a variety of applications, such as data interface, power conversion, and motor control. Additionally, its low-voltage drop, high blocking capability, and low on-state resistance make it a great choice for circuit protection, voltage regulation, and low-power switching.

The specific data is subject to PDF, and the above content is for reference

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